Optical transitions in InGaN/GaN double heterostructures

Mee Yi Ryu, Phil Won Yu, Eun Joo Shin, Nam Woong Song, Joo In Lee, Dongho Kim, Eun Soon Oh, Yong Jo Park, Hyeong Soo Park, Tae Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I emi) of the main PL peaks increase superlinearly with excitation intensity (I exc), following a power-law form, I emi ∝ I exc β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.

Original languageEnglish
Pages (from-to)S1021-S1024
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 4
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Optical transitions in InGaN/GaN double heterostructures'. Together they form a unique fingerprint.

Cite this