Optimization of post nitridation annealing (PNA) in plasma nitrided gate oxide integration exhibited reduction of gate leakage current and improvement of negative bias temperature instability (NBTI) without drive current loss have been demonstrated. An improved interface quality by a high temperature or a high pressure O2 PNA is the main factor to improve channel mobility. The addition of both post clean annealing (PCA) and post oxidation annealing (POA) allows for gate dielectric scaling down with the benefit of drive current improvement. An increase in oxide thickness and a decrease in relative nitrogen concentration resulted in the improvement of NBTI characteristics.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2005 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)