Optimization of annealing process of pulsed RF decoupled plasma nitridation oxynitrides

Sang Woo Lim, Daniel Tekleab, Tien Ying Luo, Paul Grudowski

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Optimization of post nitridation annealing (PNA) in plasma nitrided gate oxide integration exhibited reduction of gate leakage current and improvement of negative bias temperature instability (NBTI) without drive current loss have been demonstrated. An improved interface quality by a high temperature or a high pressure O2 PNA is the main factor to improve channel mobility. The addition of both post clean annealing (PCA) and post oxidation annealing (POA) allows for gate dielectric scaling down with the benefit of drive current improvement. An increase in oxide thickness and a decrease in relative nitrogen concentration resulted in the improvement of NBTI characteristics.

Original languageEnglish
Pages (from-to)L584-L586
JournalJapanese Journal of Applied Physics
Issue number16-19
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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