Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

Seongil Im, Jack Washburn, Ronald Gronsky, Nathan W. Cheung, Kin Man Yu, Joel W. Ager

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

In order to study the strain-compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5×1016/cm2) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22.

Original languageEnglish
Pages (from-to)2682-2684
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number19
DOIs
Publication statusPublished - 1993 Dec 1

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solid phases
optimization
implantation
dosage
crystallinity
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Im, Seongil ; Washburn, Jack ; Gronsky, Ronald ; Cheung, Nathan W. ; Yu, Kin Man ; Ager, Joel W. / Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers. In: Applied Physics Letters. 1993 ; Vol. 63, No. 19. pp. 2682-2684.
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Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers. / Im, Seongil; Washburn, Jack; Gronsky, Ronald; Cheung, Nathan W.; Yu, Kin Man; Ager, Joel W.

In: Applied Physics Letters, Vol. 63, No. 19, 01.12.1993, p. 2682-2684.

Research output: Contribution to journalArticle

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T1 - Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

AU - Im, Seongil

AU - Washburn, Jack

AU - Gronsky, Ronald

AU - Cheung, Nathan W.

AU - Yu, Kin Man

AU - Ager, Joel W.

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AB - In order to study the strain-compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5×1016/cm2) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22.

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