Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials

Sang Kyun Kim, Hyeon Mo Cho, Changsoo Woo, Sang Ran Koh, Mi Young Kim, Hui Chan Yoon, Woojin Lee, Seung Wook Shin, Jong Seob Kim, Tuwon Chang

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

In the current semiconductor industry, hardmasks have become essential for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and cost of ownership. As the design rule shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling of optical properties of Si-SOH is important in order to obtain low reflectivity in the exposure process. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography and immersion ArF lithography. In this paper, the technique for optimization of optical properties, especially n and k values, of Si-SOH is described. To control n and k values, several chromophores were screened and the ratio among them was optimized. Although the amount of chromophores increased and the silicon contents decreased, our etch resistance enhancement technique allowed Si-SOH to have sufficient etch resistance. Characterization of this Si-SOH and lithographic performance using these materials are described in detail.

Original languageEnglish
Article number71402V
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7140
DOIs
Publication statusPublished - 2008 Dec 1
EventLithography Asia 2008 - Taipei, Taiwan, Province of China
Duration: 2008 Nov 42008 Nov 6

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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