Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials

Sang Kyun Kim, Hyeon Mo Cho, Changsoo Woo, Sang Ran Koh, Mi Young Kim, Hui Chan Yoon, Woojin Lee, Seung Wook Shin, Jong Seob Kim, Tuwon Chang

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

In the current semiconductor industry, hardmasks have become essential for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and cost of ownership. As the design rule shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling of optical properties of Si-SOH is important in order to obtain low reflectivity in the exposure process. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography and immersion ArF lithography. In this paper, the technique for optimization of optical properties, especially n and k values, of Si-SOH is described. To control n and k values, several chromophores were screened and the ratio among them was optimized. Although the amount of chromophores increased and the silicon contents decreased, our etch resistance enhancement technique allowed Si-SOH to have sufficient etch resistance. Characterization of this Si-SOH and lithographic performance using these materials are described in detail.

Original languageEnglish
Article number71402V
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7140
DOIs
Publication statusPublished - 2008 Dec 1
EventLithography Asia 2008 - Taipei, Taiwan, Province of China
Duration: 2008 Nov 42008 Nov 6

Fingerprint

Silicon
Optical Properties
Optical properties
optical properties
optimization
Optimization
silicon
Chromophores
Lithography
chromophores
lithography
Immersion Lithography
Design Rules
Photoresist
Photoresists
Patterning
Reflectivity
photoresists
Margin
submerging

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kim, Sang Kyun ; Cho, Hyeon Mo ; Woo, Changsoo ; Koh, Sang Ran ; Kim, Mi Young ; Yoon, Hui Chan ; Lee, Woojin ; Shin, Seung Wook ; Kim, Jong Seob ; Chang, Tuwon. / Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials. In: Proceedings of SPIE - The International Society for Optical Engineering. 2008 ; Vol. 7140.
@article{f31cfc887936445fa70451813e51428d,
title = "Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials",
abstract = "In the current semiconductor industry, hardmasks have become essential for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and cost of ownership. As the design rule shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling of optical properties of Si-SOH is important in order to obtain low reflectivity in the exposure process. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography and immersion ArF lithography. In this paper, the technique for optimization of optical properties, especially n and k values, of Si-SOH is described. To control n and k values, several chromophores were screened and the ratio among them was optimized. Although the amount of chromophores increased and the silicon contents decreased, our etch resistance enhancement technique allowed Si-SOH to have sufficient etch resistance. Characterization of this Si-SOH and lithographic performance using these materials are described in detail.",
author = "Kim, {Sang Kyun} and Cho, {Hyeon Mo} and Changsoo Woo and Koh, {Sang Ran} and Kim, {Mi Young} and Yoon, {Hui Chan} and Woojin Lee and Shin, {Seung Wook} and Kim, {Jong Seob} and Tuwon Chang",
year = "2008",
month = "12",
day = "1",
doi = "10.1117/12.804399",
language = "English",
volume = "7140",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials. / Kim, Sang Kyun; Cho, Hyeon Mo; Woo, Changsoo; Koh, Sang Ran; Kim, Mi Young; Yoon, Hui Chan; Lee, Woojin; Shin, Seung Wook; Kim, Jong Seob; Chang, Tuwon.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7140, 71402V, 01.12.2008.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials

AU - Kim, Sang Kyun

AU - Cho, Hyeon Mo

AU - Woo, Changsoo

AU - Koh, Sang Ran

AU - Kim, Mi Young

AU - Yoon, Hui Chan

AU - Lee, Woojin

AU - Shin, Seung Wook

AU - Kim, Jong Seob

AU - Chang, Tuwon

PY - 2008/12/1

Y1 - 2008/12/1

N2 - In the current semiconductor industry, hardmasks have become essential for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and cost of ownership. As the design rule shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling of optical properties of Si-SOH is important in order to obtain low reflectivity in the exposure process. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography and immersion ArF lithography. In this paper, the technique for optimization of optical properties, especially n and k values, of Si-SOH is described. To control n and k values, several chromophores were screened and the ratio among them was optimized. Although the amount of chromophores increased and the silicon contents decreased, our etch resistance enhancement technique allowed Si-SOH to have sufficient etch resistance. Characterization of this Si-SOH and lithographic performance using these materials are described in detail.

AB - In the current semiconductor industry, hardmasks have become essential for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and cost of ownership. As the design rule shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling of optical properties of Si-SOH is important in order to obtain low reflectivity in the exposure process. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography and immersion ArF lithography. In this paper, the technique for optimization of optical properties, especially n and k values, of Si-SOH is described. To control n and k values, several chromophores were screened and the ratio among them was optimized. Although the amount of chromophores increased and the silicon contents decreased, our etch resistance enhancement technique allowed Si-SOH to have sufficient etch resistance. Characterization of this Si-SOH and lithographic performance using these materials are described in detail.

UR - http://www.scopus.com/inward/record.url?scp=62449189697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62449189697&partnerID=8YFLogxK

U2 - 10.1117/12.804399

DO - 10.1117/12.804399

M3 - Conference article

AN - SCOPUS:62449189697

VL - 7140

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

M1 - 71402V

ER -