Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)

Hong Hee Kim; David O. Kumi; Kiwoong Kim; Donghee Park; Yeonjin Yi; So Hye Cho; Cheolmin Park; O. M. Ntwaeaborwa; Won Kook Choi

doi:10.1039/c9ra06976c

Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)

Hong Hee Kim, David O. Kumi, Kiwoong Kim, Donghee Park, Yeonjin Yi, So Hye Cho, Cheolmin Park, O. M. Ntwaeaborwa, Won Kook Choi

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11 Citations (Scopus)

Abstract

In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (L_max) and maximum luminance efficiency (LE_max) of QD-LEDs based on ZnGaMgO NPs reached 43440 cd m^-2 and 15.4 cd A^-1. These results increased by 34%, 10% and 27% for the L_max and 450%, 88%, and 208% for the LE_max when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs.

Original language	English
Pages (from-to)	32066-32071
Number of pages	6
Journal	RSC Advances
Volume	9
Issue number	55
DOIs	https://doi.org/10.1039/c9ra06976c
Publication status	Published - 2019

Bibliographical note

Funding Information:
This work was supported by Korea Institute of Science and Technology (KIST) Institutional Program under Contract No. 2E28200 and South Africa/South Korea joint collaboration programmed managed by National Research Foundation, (Grant No. 2014K1A3A1A09063246/SKO15081792426)

Publisher Copyright:
© The Royal Society of Chemistry 2019.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Chemical Engineering(all)

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title = "Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)",

abstract = "In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (Lmax) and maximum luminance efficiency (LEmax) of QD-LEDs based on ZnGaMgO NPs reached 43440 cd m-2 and 15.4 cd A-1. These results increased by 34%, 10% and 27% for the Lmax and 450%, 88%, and 208% for the LEmax when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs.",

author = "Kim, {Hong Hee} and Kumi, {David O.} and Kiwoong Kim and Donghee Park and Yeonjin Yi and Cho, {So Hye} and Cheolmin Park and Ntwaeaborwa, {O. M.} and Choi, {Won Kook}",

note = "Funding Information: This work was supported by Korea Institute of Science and Technology (KIST) Institutional Program under Contract No. 2E28200 and South Africa/South Korea joint collaboration programmed managed by National Research Foundation, (Grant No. 2014K1A3A1A09063246/SKO15081792426) Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2019.",

year = "2019",

doi = "10.1039/c9ra06976c",

language = "English",

volume = "9",

pages = "32066--32071",

journal = "RSC Advances",

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publisher = "Royal Society of Chemistry",

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T1 - Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)

AU - Kim, Hong Hee

AU - Kumi, David O.

AU - Kim, Kiwoong

AU - Park, Donghee

AU - Yi, Yeonjin

AU - Cho, So Hye

AU - Park, Cheolmin

AU - Ntwaeaborwa, O. M.

AU - Choi, Won Kook

N1 - Funding Information: This work was supported by Korea Institute of Science and Technology (KIST) Institutional Program under Contract No. 2E28200 and South Africa/South Korea joint collaboration programmed managed by National Research Foundation, (Grant No. 2014K1A3A1A09063246/SKO15081792426) Publisher Copyright: © The Royal Society of Chemistry 2019.

PY - 2019

Y1 - 2019

N2 - In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (Lmax) and maximum luminance efficiency (LEmax) of QD-LEDs based on ZnGaMgO NPs reached 43440 cd m-2 and 15.4 cd A-1. These results increased by 34%, 10% and 27% for the Lmax and 450%, 88%, and 208% for the LEmax when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs.

AB - In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (Lmax) and maximum luminance efficiency (LEmax) of QD-LEDs based on ZnGaMgO NPs reached 43440 cd m-2 and 15.4 cd A-1. These results increased by 34%, 10% and 27% for the Lmax and 450%, 88%, and 208% for the LEmax when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs.

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Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)

Abstract

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