Optimization of the patterning processing and electrical characteristics of a photopatternable organosiloxane-based gate dielectric for organic thin-film transistors

Sunho Jeong, Seong Hui Lee, Dongjo Kim, Jooho Moon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A ultraviolet (UV)-crosslinkable organosiloxane-based organic-inorganic hybrid gate dielectric for use in organic thin-film transistors was fabricated. The hybrid dielectric was synthesized via a sol-gel reaction using a mixture of a Si-based alkoxide, which contained a UV-crosslinkable organic functional group for photopatternability and a Zr-based alkoxide, which provided for a high dielectric constant (~5.5). To obtain a precisely patterned dielectric layer with a linewidth of 3 μm, the prebake temperature and the UV irradiation time were optimized by investigating the evolution of the chemical structure and analyzing the photopolymerization kinetics of the UV-crosslinkable organic group. In addition, chemical groups that caused current leakage were eliminated by controlling the post-bake temperature, resulting in a gate dielectric with a dielectric strength of 1.2 MV/cm.

Original languageEnglish
Pages (from-to)2154-2159
Number of pages6
JournalJournal of the Korean Physical Society
Volume53
Issue number4
DOIs
Publication statusPublished - 2008 Oct

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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