Optimization of tunneling magnetotransport and thermal properties in magnetic tunnel junctions by rapid thermal anneal

K. I. Lee; K. H. Chae; J. H. Lee; J. G. Ha; K. Rhie; W. Y. Lee; K. H. Shin

doi:10.1016/S0167-9317(03)00313-7

Optimization of tunneling magnetotransport and thermal properties in magnetic tunnel junctions by rapid thermal anneal

K. I. Lee, K. H. Chae, J. H. Lee, J. G. Ha, K. Rhie, W. Y. Lee, K. H. Shin

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report on a systematic investigation of rapid thermal anneal (RTA) effects on the properties of FeMn exchange-biased magnetic tunnel junctions (MTJs). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, whereas the TMR in MTJs annealed by RTA increases with annealing temperature up to 300 °C, reaching ∼46%. A significant change in the effective barrier thickness (t_eff) and height (Φ_eff) occurs within 10 s during RTA. Transmission electron microscopy and X-ray reflectivity studies demonstrate that the interface of the alumina tunnel barrier for the MTJ annealed by RTA became sharper and clearer, giving rise to the enhanced TMR.

Original language	English
Pages (from-to)	305-308
Number of pages	4
Journal	Microelectronic Engineering
Volume	69
Issue number	2-4
DOIs	https://doi.org/10.1016/S0167-9317(03)00313-7
Publication status	Published - 2003 Sept

Bibliographical note

Funding Information:
This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology. One of the authors (J.G.H.) thanks Kwangwoon University for a research grant in 2001.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(03)00313-7

Cite this

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title = "Optimization of tunneling magnetotransport and thermal properties in magnetic tunnel junctions by rapid thermal anneal",

abstract = "We report on a systematic investigation of rapid thermal anneal (RTA) effects on the properties of FeMn exchange-biased magnetic tunnel junctions (MTJs). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, whereas the TMR in MTJs annealed by RTA increases with annealing temperature up to 300 °C, reaching ∼46%. A significant change in the effective barrier thickness (teff) and height (Φeff) occurs within 10 s during RTA. Transmission electron microscopy and X-ray reflectivity studies demonstrate that the interface of the alumina tunnel barrier for the MTJ annealed by RTA became sharper and clearer, giving rise to the enhanced TMR.",

author = "Lee, {K. I.} and Chae, {K. H.} and Lee, {J. H.} and Ha, {J. G.} and K. Rhie and Lee, {W. Y.} and Shin, {K. H.}",

note = "Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology. One of the authors (J.G.H.) thanks Kwangwoon University for a research grant in 2001.",

year = "2003",

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doi = "10.1016/S0167-9317(03)00313-7",

language = "English",

volume = "69",

pages = "305--308",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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T1 - Optimization of tunneling magnetotransport and thermal properties in magnetic tunnel junctions by rapid thermal anneal

AU - Lee, K. I.

AU - Chae, K. H.

AU - Lee, J. H.

AU - Ha, J. G.

AU - Rhie, K.

AU - Lee, W. Y.

AU - Shin, K. H.

N1 - Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology. One of the authors (J.G.H.) thanks Kwangwoon University for a research grant in 2001.

PY - 2003/9

Y1 - 2003/9

N2 - We report on a systematic investigation of rapid thermal anneal (RTA) effects on the properties of FeMn exchange-biased magnetic tunnel junctions (MTJs). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, whereas the TMR in MTJs annealed by RTA increases with annealing temperature up to 300 °C, reaching ∼46%. A significant change in the effective barrier thickness (teff) and height (Φeff) occurs within 10 s during RTA. Transmission electron microscopy and X-ray reflectivity studies demonstrate that the interface of the alumina tunnel barrier for the MTJ annealed by RTA became sharper and clearer, giving rise to the enhanced TMR.

AB - We report on a systematic investigation of rapid thermal anneal (RTA) effects on the properties of FeMn exchange-biased magnetic tunnel junctions (MTJs). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, whereas the TMR in MTJs annealed by RTA increases with annealing temperature up to 300 °C, reaching ∼46%. A significant change in the effective barrier thickness (teff) and height (Φeff) occurs within 10 s during RTA. Transmission electron microscopy and X-ray reflectivity studies demonstrate that the interface of the alumina tunnel barrier for the MTJ annealed by RTA became sharper and clearer, giving rise to the enhanced TMR.

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U2 - 10.1016/S0167-9317(03)00313-7

DO - 10.1016/S0167-9317(03)00313-7

M3 - Article

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SN - 0167-9317

VL - 69

SP - 305

EP - 308

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 2-4

ER -

Optimization of tunneling magnetotransport and thermal properties in magnetic tunnel junctions by rapid thermal anneal

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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