Optimizing n-ZnO/p-Si heterojunctions for photodiode applications

J. Y. Lee, Y. S. Choi, J. H. Kim, M. O. Park, S. Im

Research output: Contribution to journalConference article

180 Citations (Scopus)

Abstract

N-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. The substrate temperatures of 300, 400, 480 and 550°C were taken for the n-ZnO film deposition using an Ar/O2 ratio of 6:1. All the diodes show typical rectifying behaviors as characterized by the current-voltage (I-V) measurement in a dark room and their photoelectric effects from the diodes have been observed under illumination using monochromatic red light with a wavelength of 670 nm. Maximum amount of photo-current or responsivity is obtained under reverse bias conditions from a n-ZnO/p-Si heterojunction when the ZnO film was deposited at 480°C while the ZnO films deposited at 550°C show the best stoichiometric and crystalline quality. Junction leakage or dark current is much higher in the diode with n-ZnO deposited at 550°C than in the other diodes. It is thus concluded that for a photodiode the quality of the diode junction is as important as that of the n-ZnO film deposited on p-Si.

Original languageEnglish
Pages (from-to)553-557
Number of pages5
JournalThin Solid Films
Volume403-404
DOIs
Publication statusPublished - 2002 Feb 1
EventProceedings of Symposium P on Thin Film Materials for Photovolt E-MRS - Strasbourg, France
Duration: 2001 Jun 52001 Jun 8

Fingerprint

Photodiodes
photodiodes
Heterojunctions
heterojunctions
Diodes
diodes
Photoelectricity
photoelectric effect
junction diodes
Sputter deposition
Dark currents
Substrates
dark current
Leakage currents
rooms
leakage
Lighting
illumination
Crystalline materials
Wavelength

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, J. Y. ; Choi, Y. S. ; Kim, J. H. ; Park, M. O. ; Im, S. / Optimizing n-ZnO/p-Si heterojunctions for photodiode applications. In: Thin Solid Films. 2002 ; Vol. 403-404. pp. 553-557.
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Optimizing n-ZnO/p-Si heterojunctions for photodiode applications. / Lee, J. Y.; Choi, Y. S.; Kim, J. H.; Park, M. O.; Im, S.

In: Thin Solid Films, Vol. 403-404, 01.02.2002, p. 553-557.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Optimizing n-ZnO/p-Si heterojunctions for photodiode applications

AU - Lee, J. Y.

AU - Choi, Y. S.

AU - Kim, J. H.

AU - Park, M. O.

AU - Im, S.

PY - 2002/2/1

Y1 - 2002/2/1

N2 - N-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. The substrate temperatures of 300, 400, 480 and 550°C were taken for the n-ZnO film deposition using an Ar/O2 ratio of 6:1. All the diodes show typical rectifying behaviors as characterized by the current-voltage (I-V) measurement in a dark room and their photoelectric effects from the diodes have been observed under illumination using monochromatic red light with a wavelength of 670 nm. Maximum amount of photo-current or responsivity is obtained under reverse bias conditions from a n-ZnO/p-Si heterojunction when the ZnO film was deposited at 480°C while the ZnO films deposited at 550°C show the best stoichiometric and crystalline quality. Junction leakage or dark current is much higher in the diode with n-ZnO deposited at 550°C than in the other diodes. It is thus concluded that for a photodiode the quality of the diode junction is as important as that of the n-ZnO film deposited on p-Si.

AB - N-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. The substrate temperatures of 300, 400, 480 and 550°C were taken for the n-ZnO film deposition using an Ar/O2 ratio of 6:1. All the diodes show typical rectifying behaviors as characterized by the current-voltage (I-V) measurement in a dark room and their photoelectric effects from the diodes have been observed under illumination using monochromatic red light with a wavelength of 670 nm. Maximum amount of photo-current or responsivity is obtained under reverse bias conditions from a n-ZnO/p-Si heterojunction when the ZnO film was deposited at 480°C while the ZnO films deposited at 550°C show the best stoichiometric and crystalline quality. Junction leakage or dark current is much higher in the diode with n-ZnO deposited at 550°C than in the other diodes. It is thus concluded that for a photodiode the quality of the diode junction is as important as that of the n-ZnO film deposited on p-Si.

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