Optimizing n-ZnO/p-Si heterojunctions for photodiode applications

J. Y. Lee, Y. S. Choi, J. H. Kim, M. O. Park, S. Im

Research output: Contribution to journalConference articlepeer-review

200 Citations (Scopus)


N-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. The substrate temperatures of 300, 400, 480 and 550°C were taken for the n-ZnO film deposition using an Ar/O2 ratio of 6:1. All the diodes show typical rectifying behaviors as characterized by the current-voltage (I-V) measurement in a dark room and their photoelectric effects from the diodes have been observed under illumination using monochromatic red light with a wavelength of 670 nm. Maximum amount of photo-current or responsivity is obtained under reverse bias conditions from a n-ZnO/p-Si heterojunction when the ZnO film was deposited at 480°C while the ZnO films deposited at 550°C show the best stoichiometric and crystalline quality. Junction leakage or dark current is much higher in the diode with n-ZnO deposited at 550°C than in the other diodes. It is thus concluded that for a photodiode the quality of the diode junction is as important as that of the n-ZnO film deposited on p-Si.

Original languageEnglish
Pages (from-to)553-557
Number of pages5
JournalThin Solid Films
Publication statusPublished - 2002 Feb 1
EventProceedings of Symposium P on Thin Film Materials for Photovolt E-MRS - Strasbourg, France
Duration: 2001 Jun 52001 Jun 8

Bibliographical note

Funding Information:
The work has been supported by the Brain Korea 21 project and partly supported by Korea Research Foundation (KRF) fund (2000-2-0816).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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