Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes

C. S. Choi, W. Y. Choi, M. H. Joo, J. H. Song, S. Im

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×1013 B cm-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.

Original languageEnglish
Pages (from-to)613-617
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number2
DOIs
Publication statusPublished - 2002 Mar

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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