Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×1013 B cm-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2002 Mar|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering