Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes

C. S. Choi, Woo-Young Choi, M. H. Joo, J. H. Song, Seongil Im

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×1013 B cm-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.

Original languageEnglish
Pages (from-to)613-617
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number2
DOIs
Publication statusPublished - 2002 Mar 1

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Schottky diodes
implantation
Diodes
diodes
electrical faults
Electric breakdown
breakdown
dosage
ion implantation
electric contacts
boron
Ion implantation
Boron
Electric fields
electric fields
Ions
ions

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{7843f15fc71f498981c46ef0f803274a,
title = "Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes",
abstract = "Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×1013 B cm-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.",
author = "Choi, {C. S.} and Woo-Young Choi and Joo, {M. H.} and Song, {J. H.} and Seongil Im",
year = "2002",
month = "3",
day = "1",
doi = "10.1116/1.1458953",
language = "English",
volume = "20",
pages = "613--617",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "2",

}

Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes. / Choi, C. S.; Choi, Woo-Young; Joo, M. H.; Song, J. H.; Im, Seongil.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 2, 01.03.2002, p. 613-617.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes

AU - Choi, C. S.

AU - Choi, Woo-Young

AU - Joo, M. H.

AU - Song, J. H.

AU - Im, Seongil

PY - 2002/3/1

Y1 - 2002/3/1

N2 - Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×1013 B cm-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.

AB - Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×1013 B cm-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.

UR - http://www.scopus.com/inward/record.url?scp=0036505039&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036505039&partnerID=8YFLogxK

U2 - 10.1116/1.1458953

DO - 10.1116/1.1458953

M3 - Article

AN - SCOPUS:0036505039

VL - 20

SP - 613

EP - 617

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 2

ER -