The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)