Optimum channel thickness of rubrene thin-film transistors

Jeong M. Choi, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report the influence of channel thickness on the field effect mobility of rubrene-based thin-film transistors (TFTs). Prior to crystallization annealing, amorphous (α) rubrene film was deposited under thickness conditions of 40, 50, 80, 120, and 160 nm by thermal evaporation on self-assembled-monolayer treated SiO2 / p+ -Si. Field effect mobility of the TFTs increased from almost 0 to 0.01 cm2 /V s with the rubrene channel thickness until it reaches to 120 nm because the rubrene crystallization on our substrate would not be perfect below 120 nm. The mobility decreased with the thickness over 120 nm due to parasitic resistance. We thus conclude that there exists an optimum channel thickness for rubrene TFTs.

Original languageEnglish
Article number043309
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
Publication statusPublished - 2008 Aug 15

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transistors
thin films
crystallization
evaporation
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{48a6557b3d714235be29562e327f499b,
title = "Optimum channel thickness of rubrene thin-film transistors",
abstract = "We report the influence of channel thickness on the field effect mobility of rubrene-based thin-film transistors (TFTs). Prior to crystallization annealing, amorphous (α) rubrene film was deposited under thickness conditions of 40, 50, 80, 120, and 160 nm by thermal evaporation on self-assembled-monolayer treated SiO2 / p+ -Si. Field effect mobility of the TFTs increased from almost 0 to 0.01 cm2 /V s with the rubrene channel thickness until it reaches to 120 nm because the rubrene crystallization on our substrate would not be perfect below 120 nm. The mobility decreased with the thickness over 120 nm due to parasitic resistance. We thus conclude that there exists an optimum channel thickness for rubrene TFTs.",
author = "Choi, {Jeong M.} and Seongil Im",
year = "2008",
month = "8",
day = "15",
doi = "10.1063/1.2966354",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Optimum channel thickness of rubrene thin-film transistors. / Choi, Jeong M.; Im, Seongil.

In: Applied Physics Letters, Vol. 93, No. 4, 043309, 15.08.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optimum channel thickness of rubrene thin-film transistors

AU - Choi, Jeong M.

AU - Im, Seongil

PY - 2008/8/15

Y1 - 2008/8/15

N2 - We report the influence of channel thickness on the field effect mobility of rubrene-based thin-film transistors (TFTs). Prior to crystallization annealing, amorphous (α) rubrene film was deposited under thickness conditions of 40, 50, 80, 120, and 160 nm by thermal evaporation on self-assembled-monolayer treated SiO2 / p+ -Si. Field effect mobility of the TFTs increased from almost 0 to 0.01 cm2 /V s with the rubrene channel thickness until it reaches to 120 nm because the rubrene crystallization on our substrate would not be perfect below 120 nm. The mobility decreased with the thickness over 120 nm due to parasitic resistance. We thus conclude that there exists an optimum channel thickness for rubrene TFTs.

AB - We report the influence of channel thickness on the field effect mobility of rubrene-based thin-film transistors (TFTs). Prior to crystallization annealing, amorphous (α) rubrene film was deposited under thickness conditions of 40, 50, 80, 120, and 160 nm by thermal evaporation on self-assembled-monolayer treated SiO2 / p+ -Si. Field effect mobility of the TFTs increased from almost 0 to 0.01 cm2 /V s with the rubrene channel thickness until it reaches to 120 nm because the rubrene crystallization on our substrate would not be perfect below 120 nm. The mobility decreased with the thickness over 120 nm due to parasitic resistance. We thus conclude that there exists an optimum channel thickness for rubrene TFTs.

UR - http://www.scopus.com/inward/record.url?scp=49149096155&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49149096155&partnerID=8YFLogxK

U2 - 10.1063/1.2966354

DO - 10.1063/1.2966354

M3 - Article

AN - SCOPUS:49149096155

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043309

ER -