VOx films were fabricated on thermally grown SiO2 layers by reactive r.f. sputtering at room temperature. The working pressure was 5 mTorr, adjusted by changing Ar and O2 flow from 1:1 to 10:1. Post annealing was performed at the temperatures of 200°C, 300°C, 400°C, 450°C, and 500°C. Electrical resistivities of VOx films were measured at various temperatures from 25°C to 80°C and the temperature coefficient of resistance (TCR) was calculated for each film. The resistivity decreases with the increase of the annealing temperature and shows two steps of critical drops at 300°C and 450°C, respectively. This is attributed to the phase transitions of the as-deposited VOx as characterized by X-ray diffraction (XRD). Considering both the TCR and resistivities, it is concluded that the optimum oxygen concentration, x in the VOx films approaches to 2.25 (V4O9).
|Number of pages||4|
|Publication status||Published - 2001 Jun|
|Event||Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France|
Duration: 2000 May 30 → 2000 Jun 2
Bibliographical noteFunding Information:
The work has been supported by the Brain Korea 21 project.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering