Optimum oxygen concentration for the optoelectronic properties of IR sensitive VOx thin films

K. M. Park, S. Yi, S. Moon, S. Im

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

VOx films were fabricated on thermally grown SiO2 layers by reactive r.f. sputtering at room temperature. The working pressure was 5 mTorr, adjusted by changing Ar and O2 flow from 1:1 to 10:1. Post annealing was performed at the temperatures of 200°C, 300°C, 400°C, 450°C, and 500°C. Electrical resistivities of VOx films were measured at various temperatures from 25°C to 80°C and the temperature coefficient of resistance (TCR) was calculated for each film. The resistivity decreases with the increase of the annealing temperature and shows two steps of critical drops at 300°C and 450°C, respectively. This is attributed to the phase transitions of the as-deposited VOx as characterized by X-ray diffraction (XRD). Considering both the TCR and resistivities, it is concluded that the optimum oxygen concentration, x in the VOx films approaches to 2.25 (V4O9).

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalOptical Materials
Volume17
Issue number1-2
DOIs
Publication statusPublished - 2001 Jun
EventOptoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France
Duration: 2000 May 302000 Jun 2

Bibliographical note

Funding Information:
The work has been supported by the Brain Korea 21 project.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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