Abstract
We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. N-ZnO films were deposited on p-Si at various temperatures of 300, 480, and 550°C for the diode fabrication. Some of the diodes exhibited strong photoelectric effects under illumination using a monochromatic red light. The diode with n-ZnO deposited at 480°C was found to relatively satisfy the optimum conditions for the optimal photoelectric performance: a relatively high film quality and a good n/p junction with a relatively thin interfacial SiO2 layer.
| Original language | English |
|---|---|
| Pages (from-to) | 7357-7358 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 41 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2002 Dec |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Choi, Y. S., Lee, J. Y., Choi, W. H., Yeom, H. W., & Im, S. (2002). Optimum thickness of SiO2 layer formed at the interface of N-ZnO/P-Si photodiodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(12), 7357-7358. https://doi.org/10.1143/jjap.41.7357