Optimum thickness of SiO2 layer formed at the interface of N-ZnO/P-Si photodiodes

Youn Sung Choi, Joon Yup Lee, Won Hoon Choi, Han Woong Yeom, Seongil Im

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. N-ZnO films were deposited on p-Si at various temperatures of 300, 480, and 550°C for the diode fabrication. Some of the diodes exhibited strong photoelectric effects under illumination using a monochromatic red light. The diode with n-ZnO deposited at 480°C was found to relatively satisfy the optimum conditions for the optimal photoelectric performance: a relatively high film quality and a good n/p junction with a relatively thin interfacial SiO2 layer.

Original languageEnglish
Pages (from-to)7357-7358
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12
Publication statusPublished - 2002 Dec

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Optimum thickness of SiO<sub>2</sub> layer formed at the interface of N-ZnO/P-Si photodiodes'. Together they form a unique fingerprint.

Cite this