Optimum thickness of SiO2 layer formed at the interface of N-ZnO/P-Si photodiodes

Youn Sung Choi; Joon Yup Lee; Won Hoon Choi; Han Woong Yeom; Seongil Im

doi:10.1143/jjap.41.7357

Optimum thickness of SiO₂ layer formed at the interface of N-ZnO/P-Si photodiodes

Youn Sung Choi, Joon Yup Lee, Won Hoon Choi, Han Woong Yeom, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. N-ZnO films were deposited on p-Si at various temperatures of 300, 480, and 550°C for the diode fabrication. Some of the diodes exhibited strong photoelectric effects under illumination using a monochromatic red light. The diode with n-ZnO deposited at 480°C was found to relatively satisfy the optimum conditions for the optimal photoelectric performance: a relatively high film quality and a good n/p junction with a relatively thin interfacial SiO₂ layer.

Original language	English
Pages (from-to)	7357-7358
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	12
DOIs	https://doi.org/10.1143/jjap.41.7357
Publication status	Published - 2002 Dec

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. N-ZnO films were deposited on p-Si at various temperatures of 300, 480, and 550°C for the diode fabrication. Some of the diodes exhibited strong photoelectric effects under illumination using a monochromatic red light. The diode with n-ZnO deposited at 480°C was found to relatively satisfy the optimum conditions for the optimal photoelectric performance: a relatively high film quality and a good n/p junction with a relatively thin interfacial SiO2 layer.",

author = "Choi, {Youn Sung} and Lee, {Joon Yup} and Choi, {Won Hoon} and Yeom, {Han Woong} and Seongil Im",

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AU - Choi, Youn Sung

AU - Lee, Joon Yup

AU - Choi, Won Hoon

AU - Yeom, Han Woong

AU - Im, Seongil

PY - 2002/12

Y1 - 2002/12

N2 - We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. N-ZnO films were deposited on p-Si at various temperatures of 300, 480, and 550°C for the diode fabrication. Some of the diodes exhibited strong photoelectric effects under illumination using a monochromatic red light. The diode with n-ZnO deposited at 480°C was found to relatively satisfy the optimum conditions for the optimal photoelectric performance: a relatively high film quality and a good n/p junction with a relatively thin interfacial SiO2 layer.

AB - We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. N-ZnO films were deposited on p-Si at various temperatures of 300, 480, and 550°C for the diode fabrication. Some of the diodes exhibited strong photoelectric effects under illumination using a monochromatic red light. The diode with n-ZnO deposited at 480°C was found to relatively satisfy the optimum conditions for the optimal photoelectric performance: a relatively high film quality and a good n/p junction with a relatively thin interfacial SiO2 layer.

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Optimum thickness of SiO₂ layer formed at the interface of N-ZnO/P-Si photodiodes

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