We report on the fabrication of n-ZnO/p-Si heterojunction photodiodes. N-ZnO films were deposited on p-Si at various temperatures of 300, 480, and 550°C for the diode fabrication. Some of the diodes exhibited strong photoelectric effects under illumination using a monochromatic red light. The diode with n-ZnO deposited at 480°C was found to relatively satisfy the optimum conditions for the optimal photoelectric performance: a relatively high film quality and a good n/p junction with a relatively thin interfacial SiO2 layer.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2002 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)