Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

Sum Gyun Yi, Joo Hyoung Kim, Jung Ki Min, Min Ji Park, Kyung Hwa Yoo, Young Wook Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages609-612
Number of pages4
ISBN (Electronic)9781467381550
DOIs
Publication statusPublished - 2015 Jan 1
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 2015 Jul 272015 Jul 30

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period15/7/2715/7/30

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Yi, S. G., Kim, J. H., Min, J. K., Park, M. J., Yoo, K. H., & Chang, Y. W. (2015). Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 609-612). [7388678] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388678