Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

Sum Gyun Yi; Joo Hyoung Kim; Jung Ki Min; Min Ji Park; Young Wook Chang; Kyung Hwa Yoo

doi:10.1109/TNANO.2016.2547183

Optoelectric properties of gate-tunable MoS₂/WSe₂ heterojunction

Sum Gyun Yi, Joo Hyoung Kim, Jung Ki Min, Min Ji Park, Young Wook Chang, Kyung Hwa Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Two-dimensional transition-metal dichalcogenides semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe₂ and MoS₂ since WSe₂ and MoS₂ with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.

Original language	English
Article number	7442174
Pages (from-to)	499-505
Number of pages	7
Journal	IEEE Transactions on Nanotechnology
Volume	15
Issue number	3
DOIs	https://doi.org/10.1109/TNANO.2016.2547183
Publication status	Published - 2016 May

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under Grants 2011-0017486 and 2012R1A4A1029061. S.-G. Yi and J. H. Kim contributed equally to this work.

Publisher Copyright:
© 2002-2012 IEEE.

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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Access to Document

10.1109/TNANO.2016.2547183

Cite this

@article{39b9a7f3b7ed4b31b4f691725d916c61,

title = "Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction",

abstract = "Two-dimensional transition-metal dichalcogenides semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.",

author = "Yi, {Sum Gyun} and Kim, {Joo Hyoung} and Min, {Jung Ki} and Park, {Min Ji} and Chang, {Young Wook} and Yoo, {Kyung Hwa}",

note = "Funding Information: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under Grants 2011-0017486 and 2012R1A4A1029061. S.-G. Yi and J. H. Kim contributed equally to this work. Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

year = "2016",

month = may,

doi = "10.1109/TNANO.2016.2547183",

language = "English",

volume = "15",

pages = "499--505",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

AU - Yi, Sum Gyun

AU - Kim, Joo Hyoung

AU - Min, Jung Ki

AU - Park, Min Ji

AU - Chang, Young Wook

AU - Yoo, Kyung Hwa

N1 - Funding Information: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under Grants 2011-0017486 and 2012R1A4A1029061. S.-G. Yi and J. H. Kim contributed equally to this work. Publisher Copyright: © 2002-2012 IEEE.

PY - 2016/5

Y1 - 2016/5

N2 - Two-dimensional transition-metal dichalcogenides semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.

AB - Two-dimensional transition-metal dichalcogenides semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84969626026&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84969626026&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2016.2547183

DO - 10.1109/TNANO.2016.2547183

M3 - Article

AN - SCOPUS:84969626026

SN - 1536-125X

VL - 15

SP - 499

EP - 505

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 3

M1 - 7442174

ER -