Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

Sum Gyun Yi, Joo Hyoung Kim, Jung Ki Min, Min Ji Park, Young Wook Chang, Kyung Hwa Yoo

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Two-dimensional transition-metal dichalcogenides semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.

Original languageEnglish
Article number7442174
Pages (from-to)499-505
Number of pages7
JournalIEEE Transactions on Nanotechnology
Issue number3
Publication statusPublished - 2016 May

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning under Grants 2011-0017486 and 2012R1A4A1029061. S.-G. Yi and J. H. Kim contributed equally to this work.

Publisher Copyright:
© 2002-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering


Dive into the research topics of 'Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction'. Together they form a unique fingerprint.

Cite this