Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

Sum Gyun Yi, Joo Hyoung Kim, Jung Ki Min, Min Ji Park, Young Wook Chang, Kyung Hwa Yoo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Two-dimensional transition-metal dichalcogenides semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.

Original languageEnglish
Article number7442174
Pages (from-to)499-505
Number of pages7
JournalIEEE Transactions on Nanotechnology
Volume15
Issue number3
DOIs
Publication statusPublished - 2016 May

Fingerprint

Heterojunctions
Photovoltaic effects
Photocurrents
Transparency
Transition metals
Energy gap
Lighting
Semiconductor materials
Electrodes
Electric potential
Metals

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Yi, Sum Gyun ; Kim, Joo Hyoung ; Min, Jung Ki ; Park, Min Ji ; Chang, Young Wook ; Yoo, Kyung Hwa. / Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction. In: IEEE Transactions on Nanotechnology. 2016 ; Vol. 15, No. 3. pp. 499-505.
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Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction. / Yi, Sum Gyun; Kim, Joo Hyoung; Min, Jung Ki; Park, Min Ji; Chang, Young Wook; Yoo, Kyung Hwa.

In: IEEE Transactions on Nanotechnology, Vol. 15, No. 3, 7442174, 05.2016, p. 499-505.

Research output: Contribution to journalArticle

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