Optoelectronic properties of three-dimensional ZnO hybrid structure

Min Chang Jeong, Byeong Yun Oh, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

Three-dimensional (3D) ZnO hybrid structure was fabricated by growing a ZnO buffer layer, a ZnO nanowire array, and a ZnO film continuously through the control of supersaturation conditions. Lower and upper ends of vertically aligned nanowires in this hybrid structure formed seamless interfacial contacts with the buffer layer and the film for current conduction. Photocurrent was generated only when the ultraviolet (UV) light (λ=350 nm) was irradiated. This structure also exhibited different atmosphere-dependent responses to the UV light. The optoelectronic properties of the 3D structure are attributed to the photogenerated carriers and the surface reaction of negatively charged oxygen species in ZnO nanowires.

Original languageEnglish
Article number103105
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
Publication statusPublished - 2005 Mar 7

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hybrid structures
nanowires
ultraviolet radiation
buffers
supersaturation
surface reactions
photocurrents
conduction
atmospheres
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Jeong, Min Chang ; Oh, Byeong Yun ; Lee, Woong ; Myoung, Jae Min. / Optoelectronic properties of three-dimensional ZnO hybrid structure. In: Applied Physics Letters. 2005 ; Vol. 86, No. 10. pp. 1-3.
@article{efbab0da39234ad0a0ae06078dd67b4d,
title = "Optoelectronic properties of three-dimensional ZnO hybrid structure",
abstract = "Three-dimensional (3D) ZnO hybrid structure was fabricated by growing a ZnO buffer layer, a ZnO nanowire array, and a ZnO film continuously through the control of supersaturation conditions. Lower and upper ends of vertically aligned nanowires in this hybrid structure formed seamless interfacial contacts with the buffer layer and the film for current conduction. Photocurrent was generated only when the ultraviolet (UV) light (λ=350 nm) was irradiated. This structure also exhibited different atmosphere-dependent responses to the UV light. The optoelectronic properties of the 3D structure are attributed to the photogenerated carriers and the surface reaction of negatively charged oxygen species in ZnO nanowires.",
author = "Jeong, {Min Chang} and Oh, {Byeong Yun} and Woong Lee and Myoung, {Jae Min}",
year = "2005",
month = "3",
day = "7",
doi = "10.1063/1.1872209",
language = "English",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

Optoelectronic properties of three-dimensional ZnO hybrid structure. / Jeong, Min Chang; Oh, Byeong Yun; Lee, Woong; Myoung, Jae Min.

In: Applied Physics Letters, Vol. 86, No. 10, 103105, 07.03.2005, p. 1-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optoelectronic properties of three-dimensional ZnO hybrid structure

AU - Jeong, Min Chang

AU - Oh, Byeong Yun

AU - Lee, Woong

AU - Myoung, Jae Min

PY - 2005/3/7

Y1 - 2005/3/7

N2 - Three-dimensional (3D) ZnO hybrid structure was fabricated by growing a ZnO buffer layer, a ZnO nanowire array, and a ZnO film continuously through the control of supersaturation conditions. Lower and upper ends of vertically aligned nanowires in this hybrid structure formed seamless interfacial contacts with the buffer layer and the film for current conduction. Photocurrent was generated only when the ultraviolet (UV) light (λ=350 nm) was irradiated. This structure also exhibited different atmosphere-dependent responses to the UV light. The optoelectronic properties of the 3D structure are attributed to the photogenerated carriers and the surface reaction of negatively charged oxygen species in ZnO nanowires.

AB - Three-dimensional (3D) ZnO hybrid structure was fabricated by growing a ZnO buffer layer, a ZnO nanowire array, and a ZnO film continuously through the control of supersaturation conditions. Lower and upper ends of vertically aligned nanowires in this hybrid structure formed seamless interfacial contacts with the buffer layer and the film for current conduction. Photocurrent was generated only when the ultraviolet (UV) light (λ=350 nm) was irradiated. This structure also exhibited different atmosphere-dependent responses to the UV light. The optoelectronic properties of the 3D structure are attributed to the photogenerated carriers and the surface reaction of negatively charged oxygen species in ZnO nanowires.

UR - http://www.scopus.com/inward/record.url?scp=17944363114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17944363114&partnerID=8YFLogxK

U2 - 10.1063/1.1872209

DO - 10.1063/1.1872209

M3 - Article

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 103105

ER -