Optoelectronic Synapse Based on IGZO-Alkylated Graphene Oxide Hybrid Structure

Jia Sun, Seyong Oh, Yongsuk Choi, Seunghwan Seo, Min Jun Oh, Minhwan Lee, Won Bo Lee, Pil J. Yoo, Jeong Ho Cho, Jin Hong Park

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Recently, research interest in brain-inspired neuromorphic computing based on robust and intelligent artificial neural networks has surged owing to the ability of such technology to facilitate massive parallel, low-power, highly adaptive, and event-driven computing. Here, a photosynaptic device with a novel weight updating mechanism for high-speed and low-power optoelectronic spike processing is proposed, wherein a synaptic weight is controlled by a mixed spike consisting of voltage and light spikes; the light spike, in particular, boosts up the probability of electron detrapping from graphene oxide charge-trapping layer to the photosensitive indium–gallium–zinc oxide charge-transporting layer. Compared to electrically operating synaptic device, the magnitude of conductance change in the proposed photosynaptic device increases remarkably from 2.32 to 5.95 nS without degradation of the nonlinearity (potentiation/depression values are changed from 4.24/8 to 5/8). Owing to this enhancement of synaptic operation, the recognition rates for the Modified National Institute of Standards and Technology digit patterns improve from 36% and 49% to 50% and 62% in artificial neural networks using long-term potentiation/depression characteristics with 20 and 100 weight states, respectively. The proposed photosynaptic device technology capable of optoelectronic spike processing is expected to play a crucial role in the implementation of neuromorphic computing in the future.

Original languageEnglish
Article number1804397
JournalAdvanced Functional Materials
Volume28
Issue number47
DOIs
Publication statusPublished - 2018 Nov 21

Fingerprint

synapses
hybrid structures
Graphite
spikes
Optoelectronic devices
Oxides
Graphene
graphene
oxides
Neural networks
Charge trapping
Processing
Brain
digits
Degradation
acceleration (physics)
Electrons
Electric potential
brain
trapping

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Sun, J., Oh, S., Choi, Y., Seo, S., Oh, M. J., Lee, M., ... Park, J. H. (2018). Optoelectronic Synapse Based on IGZO-Alkylated Graphene Oxide Hybrid Structure. Advanced Functional Materials, 28(47), [1804397]. https://doi.org/10.1002/adfm.201804397
Sun, Jia ; Oh, Seyong ; Choi, Yongsuk ; Seo, Seunghwan ; Oh, Min Jun ; Lee, Minhwan ; Lee, Won Bo ; Yoo, Pil J. ; Cho, Jeong Ho ; Park, Jin Hong. / Optoelectronic Synapse Based on IGZO-Alkylated Graphene Oxide Hybrid Structure. In: Advanced Functional Materials. 2018 ; Vol. 28, No. 47.
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Sun, J, Oh, S, Choi, Y, Seo, S, Oh, MJ, Lee, M, Lee, WB, Yoo, PJ, Cho, JH & Park, JH 2018, 'Optoelectronic Synapse Based on IGZO-Alkylated Graphene Oxide Hybrid Structure', Advanced Functional Materials, vol. 28, no. 47, 1804397. https://doi.org/10.1002/adfm.201804397

Optoelectronic Synapse Based on IGZO-Alkylated Graphene Oxide Hybrid Structure. / Sun, Jia; Oh, Seyong; Choi, Yongsuk; Seo, Seunghwan; Oh, Min Jun; Lee, Minhwan; Lee, Won Bo; Yoo, Pil J.; Cho, Jeong Ho; Park, Jin Hong.

In: Advanced Functional Materials, Vol. 28, No. 47, 1804397, 21.11.2018.

Research output: Contribution to journalArticle

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