Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates

Yong Gon Seo, Kwang Hyeon Baik, Hooyoung Song, Ji Su Son, Kyunghwan Oh, Sung Min Hwang

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14 Citations (Scopus)

Abstract

We report on orange a-plane light-emitting diodes (LEDs) with InGaN single quantum well (SQW) grown on r-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The peak wavelength and the full-width at half maximum (FWHM) at a drive current of 20mA were 612.2 nm and 72 nm, respectively. The device demonstrated a blue shift in emission wavelength from 614.6 nm at 10 mA to 607.5 nm at 100 mA, representing a net shift of 7.1 nm over a 90 mA range, which is the longest wavelength compared with reported values in nonpolar LEDs. The polarization ratio values obtained from the orange LED varied between 0.36 and 0.44 from 10 to 100mA and a weak dependence of the polarization ratio on the injection current was observed.

Original languageEnglish
Pages (from-to)12919-12924
Number of pages6
JournalOptics Express
Volume19
Issue number14
DOIs
Publication statusPublished - 2011 Jul 4

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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    Seo, Y. G., Baik, K. H., Song, H., Son, J. S., Oh, K., & Hwang, S. M. (2011). Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates. Optics Express, 19(14), 12919-12924. https://doi.org/10.1364/OE.19.012919