Ordered ferroelectric PVDF-TrFE thin films by high throughput epitaxy for nonvolatile polymer memory

Youn Jung Park, Seok Ju Kang, Bernard Lotz, Martin Brinkmann, Annette Thierry, Kap Jin Kim, Cheolmin Park

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

High throughput epitaxy of a thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film is demonstrated on a molecularly ordered poly(tetrafluoroethylene) (PTFE) substrate based on spin coating method over the area of a few centimeter square. The lattice match between (010) PVDF-TrFE and (100)PTFE results in b and c axes of PVDF-TrFE crystals preferentially parallel to a and c of PTFE, respectively and consequently produces global ordering of the edge-on PVDF-TrFE crystalline lamellae aligned perpendicular to the rubbing direction of PTFE, its c-axis. The epitaxially grown PVDF-TrFE film is successfully incorporated for arrays of ferroelectric capacitors that exhibit not only the significant reduction of ferroelectric thermal hysteresis but also the descent remanent polarization at very low effective operating voltage of ±5 V maintained to 88% of its initial value after number of fatigue cycles of 5 × 108 in the mode of bipolar pulse switching. A ferroelectric field effect transistor memory with epitaxially grown PVDF-TrFE layer as gate dielectric shows the saturated I-V hysteresis with bistable on/off ratio of approximately 102.

Original languageEnglish
Pages (from-to)8648-8654
Number of pages7
JournalMacromolecules
Volume41
Issue number22
DOIs
Publication statusPublished - 2008 Nov 25

Fingerprint

Polytetrafluoroethylenes
Epitaxial growth
Ferroelectric materials
Polymers
Throughput
Data storage equipment
Thin films
Hysteresis
Remanence
Gate dielectrics
Spin coating
Field effect transistors
Capacitors
Fatigue of materials
Crystalline materials
Crystals
trifluoroethene
polyvinylidene fluoride
Electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Organic Chemistry
  • Materials Chemistry
  • Polymers and Plastics
  • Inorganic Chemistry

Cite this

Park, Y. J., Kang, S. J., Lotz, B., Brinkmann, M., Thierry, A., Kim, K. J., & Park, C. (2008). Ordered ferroelectric PVDF-TrFE thin films by high throughput epitaxy for nonvolatile polymer memory. Macromolecules, 41(22), 8648-8654. https://doi.org/10.1021/ma801495k
Park, Youn Jung ; Kang, Seok Ju ; Lotz, Bernard ; Brinkmann, Martin ; Thierry, Annette ; Kim, Kap Jin ; Park, Cheolmin. / Ordered ferroelectric PVDF-TrFE thin films by high throughput epitaxy for nonvolatile polymer memory. In: Macromolecules. 2008 ; Vol. 41, No. 22. pp. 8648-8654.
@article{e654716707e94dbba7ffe60d0c878034,
title = "Ordered ferroelectric PVDF-TrFE thin films by high throughput epitaxy for nonvolatile polymer memory",
abstract = "High throughput epitaxy of a thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film is demonstrated on a molecularly ordered poly(tetrafluoroethylene) (PTFE) substrate based on spin coating method over the area of a few centimeter square. The lattice match between (010) PVDF-TrFE and (100)PTFE results in b and c axes of PVDF-TrFE crystals preferentially parallel to a and c of PTFE, respectively and consequently produces global ordering of the edge-on PVDF-TrFE crystalline lamellae aligned perpendicular to the rubbing direction of PTFE, its c-axis. The epitaxially grown PVDF-TrFE film is successfully incorporated for arrays of ferroelectric capacitors that exhibit not only the significant reduction of ferroelectric thermal hysteresis but also the descent remanent polarization at very low effective operating voltage of ±5 V maintained to 88{\%} of its initial value after number of fatigue cycles of 5 × 108 in the mode of bipolar pulse switching. A ferroelectric field effect transistor memory with epitaxially grown PVDF-TrFE layer as gate dielectric shows the saturated I-V hysteresis with bistable on/off ratio of approximately 102.",
author = "Park, {Youn Jung} and Kang, {Seok Ju} and Bernard Lotz and Martin Brinkmann and Annette Thierry and Kim, {Kap Jin} and Cheolmin Park",
year = "2008",
month = "11",
day = "25",
doi = "10.1021/ma801495k",
language = "English",
volume = "41",
pages = "8648--8654",
journal = "Macromolecules",
issn = "0024-9297",
publisher = "American Chemical Society",
number = "22",

}

Park, YJ, Kang, SJ, Lotz, B, Brinkmann, M, Thierry, A, Kim, KJ & Park, C 2008, 'Ordered ferroelectric PVDF-TrFE thin films by high throughput epitaxy for nonvolatile polymer memory', Macromolecules, vol. 41, no. 22, pp. 8648-8654. https://doi.org/10.1021/ma801495k

Ordered ferroelectric PVDF-TrFE thin films by high throughput epitaxy for nonvolatile polymer memory. / Park, Youn Jung; Kang, Seok Ju; Lotz, Bernard; Brinkmann, Martin; Thierry, Annette; Kim, Kap Jin; Park, Cheolmin.

In: Macromolecules, Vol. 41, No. 22, 25.11.2008, p. 8648-8654.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ordered ferroelectric PVDF-TrFE thin films by high throughput epitaxy for nonvolatile polymer memory

AU - Park, Youn Jung

AU - Kang, Seok Ju

AU - Lotz, Bernard

AU - Brinkmann, Martin

AU - Thierry, Annette

AU - Kim, Kap Jin

AU - Park, Cheolmin

PY - 2008/11/25

Y1 - 2008/11/25

N2 - High throughput epitaxy of a thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film is demonstrated on a molecularly ordered poly(tetrafluoroethylene) (PTFE) substrate based on spin coating method over the area of a few centimeter square. The lattice match between (010) PVDF-TrFE and (100)PTFE results in b and c axes of PVDF-TrFE crystals preferentially parallel to a and c of PTFE, respectively and consequently produces global ordering of the edge-on PVDF-TrFE crystalline lamellae aligned perpendicular to the rubbing direction of PTFE, its c-axis. The epitaxially grown PVDF-TrFE film is successfully incorporated for arrays of ferroelectric capacitors that exhibit not only the significant reduction of ferroelectric thermal hysteresis but also the descent remanent polarization at very low effective operating voltage of ±5 V maintained to 88% of its initial value after number of fatigue cycles of 5 × 108 in the mode of bipolar pulse switching. A ferroelectric field effect transistor memory with epitaxially grown PVDF-TrFE layer as gate dielectric shows the saturated I-V hysteresis with bistable on/off ratio of approximately 102.

AB - High throughput epitaxy of a thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film is demonstrated on a molecularly ordered poly(tetrafluoroethylene) (PTFE) substrate based on spin coating method over the area of a few centimeter square. The lattice match between (010) PVDF-TrFE and (100)PTFE results in b and c axes of PVDF-TrFE crystals preferentially parallel to a and c of PTFE, respectively and consequently produces global ordering of the edge-on PVDF-TrFE crystalline lamellae aligned perpendicular to the rubbing direction of PTFE, its c-axis. The epitaxially grown PVDF-TrFE film is successfully incorporated for arrays of ferroelectric capacitors that exhibit not only the significant reduction of ferroelectric thermal hysteresis but also the descent remanent polarization at very low effective operating voltage of ±5 V maintained to 88% of its initial value after number of fatigue cycles of 5 × 108 in the mode of bipolar pulse switching. A ferroelectric field effect transistor memory with epitaxially grown PVDF-TrFE layer as gate dielectric shows the saturated I-V hysteresis with bistable on/off ratio of approximately 102.

UR - http://www.scopus.com/inward/record.url?scp=57349150704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57349150704&partnerID=8YFLogxK

U2 - 10.1021/ma801495k

DO - 10.1021/ma801495k

M3 - Article

AN - SCOPUS:57349150704

VL - 41

SP - 8648

EP - 8654

JO - Macromolecules

JF - Macromolecules

SN - 0024-9297

IS - 22

ER -

Park YJ, Kang SJ, Lotz B, Brinkmann M, Thierry A, Kim KJ et al. Ordered ferroelectric PVDF-TrFE thin films by high throughput epitaxy for nonvolatile polymer memory. Macromolecules. 2008 Nov 25;41(22):8648-8654. https://doi.org/10.1021/ma801495k