Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications

Insung Bae, Seok Ju Kang, Youn Jung Park, T. Furukawa, Cheolmin Park

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Among the many ferroelectrics polymers, poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has drawn a great attention with its promising memory properties such as large remanent polarization, good fatigue and retention properties. Since the ferroelectric layer plays a critical role in the operation of memory device, it is important to control the structure of ferroelectric thin film. In order to improve the performance of a ferroelectric device, in this contribution we employed P(VDF-TrFE) layers blended with various compositions of an amorphous poly(methyl methacrylate) (PMMA) from 0 wt.% to 20 wt.%. In metal/ferroelectric/metal capacitor structure, we observed the decrease of remanent polarization from 9.13 μC/cm2 to 4.7 μC/cm2 and increase of coercive voltage from 9.5 V to 15.2 V with PMMA. Polarization switching time of the ferroelectric blend films estimated from the switched polarization vs. time curves increases with the amount of PMMA. Furthermore, ferroelectric field-effect transistors (FeFETs) based on ferroelectric P(VDF-TrFE) and PMMA blend films with single-crystalline tri-isopropylsilylethynyl pentacene (TIPS-PEN) channels show that both ON and OFF currents of the transistors are maintained with the PMMA contents despite the reduction of remanent polarization of P(VDF-TrFE)/PMMA films.

Original languageEnglish
Pages (from-to)e54-e57
JournalCurrent Applied Physics
Volume10
Issue number1 SUPPL. 1
DOIs
Publication statusPublished - 2010 Jan 1

Fingerprint

Polymethyl Methacrylate
vinylidene
Field effect transistors
Polymethyl methacrylates
polymethyl methacrylate
Ferroelectric materials
fluorides
field effect transistors
Data storage equipment
Thin films
Remanence
thin films
polarization
Ferroelectric devices
Metals
Polarization
Ferroelectric thin films
metals
trifluoroethene
polyvinylidene fluoride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Bae, Insung ; Kang, Seok Ju ; Park, Youn Jung ; Furukawa, T. ; Park, Cheolmin. / Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications. In: Current Applied Physics. 2010 ; Vol. 10, No. 1 SUPPL. 1. pp. e54-e57.
@article{7eb5358aac0b4d42a256603d48595935,
title = "Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications",
abstract = "Among the many ferroelectrics polymers, poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has drawn a great attention with its promising memory properties such as large remanent polarization, good fatigue and retention properties. Since the ferroelectric layer plays a critical role in the operation of memory device, it is important to control the structure of ferroelectric thin film. In order to improve the performance of a ferroelectric device, in this contribution we employed P(VDF-TrFE) layers blended with various compositions of an amorphous poly(methyl methacrylate) (PMMA) from 0 wt.{\%} to 20 wt.{\%}. In metal/ferroelectric/metal capacitor structure, we observed the decrease of remanent polarization from 9.13 μC/cm2 to 4.7 μC/cm2 and increase of coercive voltage from 9.5 V to 15.2 V with PMMA. Polarization switching time of the ferroelectric blend films estimated from the switched polarization vs. time curves increases with the amount of PMMA. Furthermore, ferroelectric field-effect transistors (FeFETs) based on ferroelectric P(VDF-TrFE) and PMMA blend films with single-crystalline tri-isopropylsilylethynyl pentacene (TIPS-PEN) channels show that both ON and OFF currents of the transistors are maintained with the PMMA contents despite the reduction of remanent polarization of P(VDF-TrFE)/PMMA films.",
author = "Insung Bae and Kang, {Seok Ju} and Park, {Youn Jung} and T. Furukawa and Cheolmin Park",
year = "2010",
month = "1",
day = "1",
doi = "10.1016/j.cap.2009.12.013",
language = "English",
volume = "10",
pages = "e54--e57",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "1 SUPPL. 1",

}

Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications. / Bae, Insung; Kang, Seok Ju; Park, Youn Jung; Furukawa, T.; Park, Cheolmin.

In: Current Applied Physics, Vol. 10, No. 1 SUPPL. 1, 01.01.2010, p. e54-e57.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications

AU - Bae, Insung

AU - Kang, Seok Ju

AU - Park, Youn Jung

AU - Furukawa, T.

AU - Park, Cheolmin

PY - 2010/1/1

Y1 - 2010/1/1

N2 - Among the many ferroelectrics polymers, poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has drawn a great attention with its promising memory properties such as large remanent polarization, good fatigue and retention properties. Since the ferroelectric layer plays a critical role in the operation of memory device, it is important to control the structure of ferroelectric thin film. In order to improve the performance of a ferroelectric device, in this contribution we employed P(VDF-TrFE) layers blended with various compositions of an amorphous poly(methyl methacrylate) (PMMA) from 0 wt.% to 20 wt.%. In metal/ferroelectric/metal capacitor structure, we observed the decrease of remanent polarization from 9.13 μC/cm2 to 4.7 μC/cm2 and increase of coercive voltage from 9.5 V to 15.2 V with PMMA. Polarization switching time of the ferroelectric blend films estimated from the switched polarization vs. time curves increases with the amount of PMMA. Furthermore, ferroelectric field-effect transistors (FeFETs) based on ferroelectric P(VDF-TrFE) and PMMA blend films with single-crystalline tri-isopropylsilylethynyl pentacene (TIPS-PEN) channels show that both ON and OFF currents of the transistors are maintained with the PMMA contents despite the reduction of remanent polarization of P(VDF-TrFE)/PMMA films.

AB - Among the many ferroelectrics polymers, poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has drawn a great attention with its promising memory properties such as large remanent polarization, good fatigue and retention properties. Since the ferroelectric layer plays a critical role in the operation of memory device, it is important to control the structure of ferroelectric thin film. In order to improve the performance of a ferroelectric device, in this contribution we employed P(VDF-TrFE) layers blended with various compositions of an amorphous poly(methyl methacrylate) (PMMA) from 0 wt.% to 20 wt.%. In metal/ferroelectric/metal capacitor structure, we observed the decrease of remanent polarization from 9.13 μC/cm2 to 4.7 μC/cm2 and increase of coercive voltage from 9.5 V to 15.2 V with PMMA. Polarization switching time of the ferroelectric blend films estimated from the switched polarization vs. time curves increases with the amount of PMMA. Furthermore, ferroelectric field-effect transistors (FeFETs) based on ferroelectric P(VDF-TrFE) and PMMA blend films with single-crystalline tri-isopropylsilylethynyl pentacene (TIPS-PEN) channels show that both ON and OFF currents of the transistors are maintained with the PMMA contents despite the reduction of remanent polarization of P(VDF-TrFE)/PMMA films.

UR - http://www.scopus.com/inward/record.url?scp=77649237922&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77649237922&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2009.12.013

DO - 10.1016/j.cap.2009.12.013

M3 - Article

AN - SCOPUS:77649237922

VL - 10

SP - e54-e57

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 1 SUPPL. 1

ER -