Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications

Insung Bae; Seok Ju Kang; Youn Jung Park; T. Furukawa; Cheolmin Park

doi:10.1016/j.cap.2009.12.013

Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications

Insung Bae, Seok Ju Kang, Youn Jung Park, T. Furukawa, Cheolmin Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Among the many ferroelectrics polymers, poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has drawn a great attention with its promising memory properties such as large remanent polarization, good fatigue and retention properties. Since the ferroelectric layer plays a critical role in the operation of memory device, it is important to control the structure of ferroelectric thin film. In order to improve the performance of a ferroelectric device, in this contribution we employed P(VDF-TrFE) layers blended with various compositions of an amorphous poly(methyl methacrylate) (PMMA) from 0 wt.% to 20 wt.%. In metal/ferroelectric/metal capacitor structure, we observed the decrease of remanent polarization from 9.13 μC/cm² to 4.7 μC/cm² and increase of coercive voltage from 9.5 V to 15.2 V with PMMA. Polarization switching time of the ferroelectric blend films estimated from the switched polarization vs. time curves increases with the amount of PMMA. Furthermore, ferroelectric field-effect transistors (FeFETs) based on ferroelectric P(VDF-TrFE) and PMMA blend films with single-crystalline tri-isopropylsilylethynyl pentacene (TIPS-PEN) channels show that both ON and OFF currents of the transistors are maintained with the PMMA contents despite the reduction of remanent polarization of P(VDF-TrFE)/PMMA films.

Original language	English
Pages (from-to)	e54-e57
Journal	Current Applied Physics
Volume	10
Issue number	1 SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2009.12.013
Publication status	Published - 2010 Jan

Bibliographical note

Funding Information:
This project was supported by The National Research Program for Memory Development and the ‘‘SYSTEM2010’’ project sponsored by the Korea Ministry of Knowledge and Economy. The X-ray experiments at PAL (4C2 beamline), Korea, were supported by MEST and POSCO, Korea. This work was supported by the Second Stage of Brain Korea 21 Project in 2006, the Seoul Science Fellowship, and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) ( 2009-080235 ).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2009.12.013

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@article{7eb5358aac0b4d42a256603d48595935,

title = "Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications",

abstract = "Among the many ferroelectrics polymers, poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has drawn a great attention with its promising memory properties such as large remanent polarization, good fatigue and retention properties. Since the ferroelectric layer plays a critical role in the operation of memory device, it is important to control the structure of ferroelectric thin film. In order to improve the performance of a ferroelectric device, in this contribution we employed P(VDF-TrFE) layers blended with various compositions of an amorphous poly(methyl methacrylate) (PMMA) from 0 wt.% to 20 wt.%. In metal/ferroelectric/metal capacitor structure, we observed the decrease of remanent polarization from 9.13 μC/cm2 to 4.7 μC/cm2 and increase of coercive voltage from 9.5 V to 15.2 V with PMMA. Polarization switching time of the ferroelectric blend films estimated from the switched polarization vs. time curves increases with the amount of PMMA. Furthermore, ferroelectric field-effect transistors (FeFETs) based on ferroelectric P(VDF-TrFE) and PMMA blend films with single-crystalline tri-isopropylsilylethynyl pentacene (TIPS-PEN) channels show that both ON and OFF currents of the transistors are maintained with the PMMA contents despite the reduction of remanent polarization of P(VDF-TrFE)/PMMA films.",

author = "Insung Bae and Kang, {Seok Ju} and Park, {Youn Jung} and T. Furukawa and Cheolmin Park",

note = "Funding Information: This project was supported by The National Research Program for Memory Development and the {\textquoteleft}{\textquoteleft}SYSTEM2010{\textquoteright}{\textquoteright} project sponsored by the Korea Ministry of Knowledge and Economy. The X-ray experiments at PAL (4C2 beamline), Korea, were supported by MEST and POSCO, Korea. This work was supported by the Second Stage of Brain Korea 21 Project in 2006, the Seoul Science Fellowship, and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) ( 2009-080235 ).",

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AU - Furukawa, T.

AU - Park, Cheolmin

N1 - Funding Information: This project was supported by The National Research Program for Memory Development and the ‘‘SYSTEM2010’’ project sponsored by the Korea Ministry of Knowledge and Economy. The X-ray experiments at PAL (4C2 beamline), Korea, were supported by MEST and POSCO, Korea. This work was supported by the Second Stage of Brain Korea 21 Project in 2006, the Seoul Science Fellowship, and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) ( 2009-080235 ).

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N2 - Among the many ferroelectrics polymers, poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has drawn a great attention with its promising memory properties such as large remanent polarization, good fatigue and retention properties. Since the ferroelectric layer plays a critical role in the operation of memory device, it is important to control the structure of ferroelectric thin film. In order to improve the performance of a ferroelectric device, in this contribution we employed P(VDF-TrFE) layers blended with various compositions of an amorphous poly(methyl methacrylate) (PMMA) from 0 wt.% to 20 wt.%. In metal/ferroelectric/metal capacitor structure, we observed the decrease of remanent polarization from 9.13 μC/cm2 to 4.7 μC/cm2 and increase of coercive voltage from 9.5 V to 15.2 V with PMMA. Polarization switching time of the ferroelectric blend films estimated from the switched polarization vs. time curves increases with the amount of PMMA. Furthermore, ferroelectric field-effect transistors (FeFETs) based on ferroelectric P(VDF-TrFE) and PMMA blend films with single-crystalline tri-isopropylsilylethynyl pentacene (TIPS-PEN) channels show that both ON and OFF currents of the transistors are maintained with the PMMA contents despite the reduction of remanent polarization of P(VDF-TrFE)/PMMA films.

AB - Among the many ferroelectrics polymers, poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has drawn a great attention with its promising memory properties such as large remanent polarization, good fatigue and retention properties. Since the ferroelectric layer plays a critical role in the operation of memory device, it is important to control the structure of ferroelectric thin film. In order to improve the performance of a ferroelectric device, in this contribution we employed P(VDF-TrFE) layers blended with various compositions of an amorphous poly(methyl methacrylate) (PMMA) from 0 wt.% to 20 wt.%. In metal/ferroelectric/metal capacitor structure, we observed the decrease of remanent polarization from 9.13 μC/cm2 to 4.7 μC/cm2 and increase of coercive voltage from 9.5 V to 15.2 V with PMMA. Polarization switching time of the ferroelectric blend films estimated from the switched polarization vs. time curves increases with the amount of PMMA. Furthermore, ferroelectric field-effect transistors (FeFETs) based on ferroelectric P(VDF-TrFE) and PMMA blend films with single-crystalline tri-isopropylsilylethynyl pentacene (TIPS-PEN) channels show that both ON and OFF currents of the transistors are maintained with the PMMA contents despite the reduction of remanent polarization of P(VDF-TrFE)/PMMA films.

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Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications

Abstract

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