Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors

Sunho Jeong, Dongjo Kim, Sul Lee, Bong Kyun Park, Joo Ho Moon

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

Using a thermally cross-linkable organosiloxane-based organic-inorganic hybrid material, a solution-processable gate dielectric layer for organic thin-film transistors has been fabricated. The hybrid dielectric was synthesized by a sol-gel process, followed by heat treatment at below 190°C. Dielectric strength of 1.4-1.65 MV/cm was measured and it was confirmed that the leakage current is governed by the Poole-Frenkel emission mechanism in which the silanol groups act as trap sites. An organic thin-film transistor utilizing the hybrid dielectric shows similar electrical performance to a transistor fabricated using surface-modified thermally grown SiO2.

Original languageEnglish
Article number092101
JournalApplied Physics Letters
Volume89
Issue number9
DOIs
Publication statusPublished - 2006 Sep 8

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leakage
transistors
thin films
sol-gel processes
heat treatment
traps

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Jeong, Sunho ; Kim, Dongjo ; Lee, Sul ; Park, Bong Kyun ; Moon, Joo Ho. / Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors. In: Applied Physics Letters. 2006 ; Vol. 89, No. 9.
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Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors. / Jeong, Sunho; Kim, Dongjo; Lee, Sul; Park, Bong Kyun; Moon, Joo Ho.

In: Applied Physics Letters, Vol. 89, No. 9, 092101, 08.09.2006.

Research output: Contribution to journalArticle

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