Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics

Kyu Seok Han, Yerok Park, Gibok Han, Byoung Hoon Lee, Kwang Hyun Lee, Dong Hee Son, Seongil Im, Myung Mo Sung

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report on a low-temperature fabrication of organic-inorganic nanohybrid nonvolatile memory transistors using molecular layer deposition combined with atomic layer deposition. A 3 nm ZnO:Cu charge trap layer is sandwiched between 6 nm tunneling and 20 nm blocking self-assembled organic layers. First, we identify a large memory window of 14.1 V operated at ±15 V using metal-oxide-semiconductor capacitors. Second, we apply the capacitor structure to the nonvolatile memory transistors which operate in the low voltage range of -1 to 3 V. The writing/erasing (+8 V/-12 V) current ratio of ∼103 of the memory transistors is maintained during the static and dynamic retention measurements. The reported organic-inorganic devices offer new opportunities to develop low-voltage-driven flexible memory electronics fabricated at low temperatures.

Original languageEnglish
Pages (from-to)19007-19013
Number of pages7
JournalJournal of Materials Chemistry
Volume22
Issue number36
DOIs
Publication statusPublished - 2012 Sep 28

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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    Han, K. S., Park, Y., Han, G., Lee, B. H., Lee, K. H., Son, D. H., Im, S., & Sung, M. M. (2012). Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics. Journal of Materials Chemistry, 22(36), 19007-19013. https://doi.org/10.1039/c2jm32767h