Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation

Sun Kak Hwang, Tae Joon Park, Kang Lib Kim, Suk Man Cho, Beom Jin Jeong, Cheolmin Park

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

As one of the most emerging next-generation nonvolatile memories, one-transistor (1T)-type nonvolatile memories are of great attention due to their excellent memory performance and simple device architecture suitable for high density memory arrays. In particular, organic 1T-type memories containing both organic semiconductors and insulators are further beneficial because of their mechanical flexibility with low cost fabrication. Here, we demonstrate a new flexible organic 1T-type memory operating at low voltage. The low voltage operation of a memory less than 10 V was obtained by employing a polymer gate insulator solution blended with ionic liquid as a charge storage layer. Ionic liquid homogeneously dissolved in a thin poly(vinylidene fluoride-cotrifluoroethylene) (PVDF-TrFE) film gave rise to low voltage operation of a device due to its high capacitance. Simultaneously, stable charge trapping of either anions or cations efficiently occurred in the polymer matrix, dependent upon gate bias. Optimization of ionic liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible organic 1T-type nonvolatile memory operating at programming voltage of ±7 V with large ON/OFF current margin of approximately 103, reliable time-dependent data retention of more than 104 seconds, and write/read endurance cycles of 80. (Chemical Equation Presented).

Original languageEnglish
Pages (from-to)20179-20187
Number of pages9
JournalACS Applied Materials and Interfaces
Volume6
Issue number22
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Ionic Liquids
Liquid films
Ionic liquids
Polymer films
Transistors
Data storage equipment
Electric potential
Charge trapping
Semiconducting organic compounds
Computer programming
Polymer matrix
Anions
Cations
Polymers
Durability
Capacitance
Negative ions
Positive ions
Fabrication

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Hwang, Sun Kak ; Park, Tae Joon ; Kim, Kang Lib ; Cho, Suk Man ; Jeong, Beom Jin ; Park, Cheolmin. / Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation. In: ACS Applied Materials and Interfaces. 2014 ; Vol. 6, No. 22. pp. 20179-20187.
@article{002b9189f42045ed9503e2276c698469,
title = "Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation",
abstract = "As one of the most emerging next-generation nonvolatile memories, one-transistor (1T)-type nonvolatile memories are of great attention due to their excellent memory performance and simple device architecture suitable for high density memory arrays. In particular, organic 1T-type memories containing both organic semiconductors and insulators are further beneficial because of their mechanical flexibility with low cost fabrication. Here, we demonstrate a new flexible organic 1T-type memory operating at low voltage. The low voltage operation of a memory less than 10 V was obtained by employing a polymer gate insulator solution blended with ionic liquid as a charge storage layer. Ionic liquid homogeneously dissolved in a thin poly(vinylidene fluoride-cotrifluoroethylene) (PVDF-TrFE) film gave rise to low voltage operation of a device due to its high capacitance. Simultaneously, stable charge trapping of either anions or cations efficiently occurred in the polymer matrix, dependent upon gate bias. Optimization of ionic liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible organic 1T-type nonvolatile memory operating at programming voltage of ±7 V with large ON/OFF current margin of approximately 103, reliable time-dependent data retention of more than 104 seconds, and write/read endurance cycles of 80. (Chemical Equation Presented).",
author = "Hwang, {Sun Kak} and Park, {Tae Joon} and Kim, {Kang Lib} and Cho, {Suk Man} and Jeong, {Beom Jin} and Cheolmin Park",
year = "2014",
month = "1",
day = "1",
doi = "10.1021/am505750v",
language = "English",
volume = "6",
pages = "20179--20187",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "22",

}

Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation. / Hwang, Sun Kak; Park, Tae Joon; Kim, Kang Lib; Cho, Suk Man; Jeong, Beom Jin; Park, Cheolmin.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 22, 01.01.2014, p. 20179-20187.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation

AU - Hwang, Sun Kak

AU - Park, Tae Joon

AU - Kim, Kang Lib

AU - Cho, Suk Man

AU - Jeong, Beom Jin

AU - Park, Cheolmin

PY - 2014/1/1

Y1 - 2014/1/1

N2 - As one of the most emerging next-generation nonvolatile memories, one-transistor (1T)-type nonvolatile memories are of great attention due to their excellent memory performance and simple device architecture suitable for high density memory arrays. In particular, organic 1T-type memories containing both organic semiconductors and insulators are further beneficial because of their mechanical flexibility with low cost fabrication. Here, we demonstrate a new flexible organic 1T-type memory operating at low voltage. The low voltage operation of a memory less than 10 V was obtained by employing a polymer gate insulator solution blended with ionic liquid as a charge storage layer. Ionic liquid homogeneously dissolved in a thin poly(vinylidene fluoride-cotrifluoroethylene) (PVDF-TrFE) film gave rise to low voltage operation of a device due to its high capacitance. Simultaneously, stable charge trapping of either anions or cations efficiently occurred in the polymer matrix, dependent upon gate bias. Optimization of ionic liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible organic 1T-type nonvolatile memory operating at programming voltage of ±7 V with large ON/OFF current margin of approximately 103, reliable time-dependent data retention of more than 104 seconds, and write/read endurance cycles of 80. (Chemical Equation Presented).

AB - As one of the most emerging next-generation nonvolatile memories, one-transistor (1T)-type nonvolatile memories are of great attention due to their excellent memory performance and simple device architecture suitable for high density memory arrays. In particular, organic 1T-type memories containing both organic semiconductors and insulators are further beneficial because of their mechanical flexibility with low cost fabrication. Here, we demonstrate a new flexible organic 1T-type memory operating at low voltage. The low voltage operation of a memory less than 10 V was obtained by employing a polymer gate insulator solution blended with ionic liquid as a charge storage layer. Ionic liquid homogeneously dissolved in a thin poly(vinylidene fluoride-cotrifluoroethylene) (PVDF-TrFE) film gave rise to low voltage operation of a device due to its high capacitance. Simultaneously, stable charge trapping of either anions or cations efficiently occurred in the polymer matrix, dependent upon gate bias. Optimization of ionic liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible organic 1T-type nonvolatile memory operating at programming voltage of ±7 V with large ON/OFF current margin of approximately 103, reliable time-dependent data retention of more than 104 seconds, and write/read endurance cycles of 80. (Chemical Equation Presented).

UR - http://www.scopus.com/inward/record.url?scp=84914690053&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84914690053&partnerID=8YFLogxK

U2 - 10.1021/am505750v

DO - 10.1021/am505750v

M3 - Article

VL - 6

SP - 20179

EP - 20187

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 22

ER -