Transparent conducting multilayer structured electrode of a few nm Ag layer embedded in tin oxide thin film SnO x/Ag/SnO x was fabricated on a glass by RF magnetron sputtering at room temperature. The multilayer of the SnO x(40 nm)/Ag(11 nm)/SnO x(40 nm) electrode shows the maximum optical transmittance of 87.3% at 550 nm and a quite low electrical resistivity of 6.5 × 10 - 5 Ω cm, and the corresponding figure of merit (T 10/R S) is equivalent to 3.6 × 10 - 2 Ω - 1. A normal organic photovoltaic (OPV) structure of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/polythiophene:phenyl-C60-butyric acid methyl ester/Al was fabricated on glass/SnO x/Ag/SnO x to examine the compatibility of OPV as a transparent conducting electrode. Measured characteristic values of open circuit voltage of 0.62 V, saturation current of 8.11 mA/cm 2 and fill factor of 0.54 are analogous to 0.63 V, 8.37 mA/cm 2 and 0.58 of OPV on commercial glass/indium tin oxide (ITO) respectively. A resultant power conversion efficiency of 2.7% is also very comparable with the 3.09% of the same OPV structure on the commercial ITO glass as a reference, and which reveals that SnO x/Ag/SnO x can be appropriate to OPV solar cells as a sound transparent conducting electrode.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry