Organic photovoltaic cells fabricated on a SnO x/Ag/SnO x multilayer transparent conducting electrode

Jeong Do Yang, Se Hee Cho, Tae Woo Hong, Dong Ick Son, Dong Hee Park, Kyung-hwa Yoo, Won Kook Choi

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Transparent conducting multilayer structured electrode of a few nm Ag layer embedded in tin oxide thin film SnO x/Ag/SnO x was fabricated on a glass by RF magnetron sputtering at room temperature. The multilayer of the SnO x(40 nm)/Ag(11 nm)/SnO x(40 nm) electrode shows the maximum optical transmittance of 87.3% at 550 nm and a quite low electrical resistivity of 6.5 × 10 - 5 Ω cm, and the corresponding figure of merit (T 10/R S) is equivalent to 3.6 × 10 - 2 Ω - 1. A normal organic photovoltaic (OPV) structure of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/polythiophene:phenyl-C60-butyric acid methyl ester/Al was fabricated on glass/SnO x/Ag/SnO x to examine the compatibility of OPV as a transparent conducting electrode. Measured characteristic values of open circuit voltage of 0.62 V, saturation current of 8.11 mA/cm 2 and fill factor of 0.54 are analogous to 0.63 V, 8.37 mA/cm 2 and 0.58 of OPV on commercial glass/indium tin oxide (ITO) respectively. A resultant power conversion efficiency of 2.7% is also very comparable with the 3.09% of the same OPV structure on the commercial ITO glass as a reference, and which reveals that SnO x/Ag/SnO x can be appropriate to OPV solar cells as a sound transparent conducting electrode.

Original languageEnglish
Pages (from-to)6215-6220
Number of pages6
JournalThin Solid Films
Volume520
Issue number19
DOIs
Publication statusPublished - 2012 Jul 31

Fingerprint

Photovoltaic cells
photovoltaic cells
Multilayers
tin oxides
ITO glass
conduction
Electrodes
electrodes
glass
indium oxides
Glass
Styrene
Butyric acid
Butyric Acid
butyric acid
Opacity
Open circuit voltage
sulfonates
Tin oxides
open circuit voltage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Yang, Jeong Do ; Cho, Se Hee ; Hong, Tae Woo ; Son, Dong Ick ; Park, Dong Hee ; Yoo, Kyung-hwa ; Choi, Won Kook. / Organic photovoltaic cells fabricated on a SnO x/Ag/SnO x multilayer transparent conducting electrode. In: Thin Solid Films. 2012 ; Vol. 520, No. 19. pp. 6215-6220.
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abstract = "Transparent conducting multilayer structured electrode of a few nm Ag layer embedded in tin oxide thin film SnO x/Ag/SnO x was fabricated on a glass by RF magnetron sputtering at room temperature. The multilayer of the SnO x(40 nm)/Ag(11 nm)/SnO x(40 nm) electrode shows the maximum optical transmittance of 87.3{\%} at 550 nm and a quite low electrical resistivity of 6.5 × 10 - 5 Ω cm, and the corresponding figure of merit (T 10/R S) is equivalent to 3.6 × 10 - 2 Ω - 1. A normal organic photovoltaic (OPV) structure of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/polythiophene:phenyl-C60-butyric acid methyl ester/Al was fabricated on glass/SnO x/Ag/SnO x to examine the compatibility of OPV as a transparent conducting electrode. Measured characteristic values of open circuit voltage of 0.62 V, saturation current of 8.11 mA/cm 2 and fill factor of 0.54 are analogous to 0.63 V, 8.37 mA/cm 2 and 0.58 of OPV on commercial glass/indium tin oxide (ITO) respectively. A resultant power conversion efficiency of 2.7{\%} is also very comparable with the 3.09{\%} of the same OPV structure on the commercial ITO glass as a reference, and which reveals that SnO x/Ag/SnO x can be appropriate to OPV solar cells as a sound transparent conducting electrode.",
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Organic photovoltaic cells fabricated on a SnO x/Ag/SnO x multilayer transparent conducting electrode. / Yang, Jeong Do; Cho, Se Hee; Hong, Tae Woo; Son, Dong Ick; Park, Dong Hee; Yoo, Kyung-hwa; Choi, Won Kook.

In: Thin Solid Films, Vol. 520, No. 19, 31.07.2012, p. 6215-6220.

Research output: Contribution to journalArticle

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T1 - Organic photovoltaic cells fabricated on a SnO x/Ag/SnO x multilayer transparent conducting electrode

AU - Yang, Jeong Do

AU - Cho, Se Hee

AU - Hong, Tae Woo

AU - Son, Dong Ick

AU - Park, Dong Hee

AU - Yoo, Kyung-hwa

AU - Choi, Won Kook

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N2 - Transparent conducting multilayer structured electrode of a few nm Ag layer embedded in tin oxide thin film SnO x/Ag/SnO x was fabricated on a glass by RF magnetron sputtering at room temperature. The multilayer of the SnO x(40 nm)/Ag(11 nm)/SnO x(40 nm) electrode shows the maximum optical transmittance of 87.3% at 550 nm and a quite low electrical resistivity of 6.5 × 10 - 5 Ω cm, and the corresponding figure of merit (T 10/R S) is equivalent to 3.6 × 10 - 2 Ω - 1. A normal organic photovoltaic (OPV) structure of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/polythiophene:phenyl-C60-butyric acid methyl ester/Al was fabricated on glass/SnO x/Ag/SnO x to examine the compatibility of OPV as a transparent conducting electrode. Measured characteristic values of open circuit voltage of 0.62 V, saturation current of 8.11 mA/cm 2 and fill factor of 0.54 are analogous to 0.63 V, 8.37 mA/cm 2 and 0.58 of OPV on commercial glass/indium tin oxide (ITO) respectively. A resultant power conversion efficiency of 2.7% is also very comparable with the 3.09% of the same OPV structure on the commercial ITO glass as a reference, and which reveals that SnO x/Ag/SnO x can be appropriate to OPV solar cells as a sound transparent conducting electrode.

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