Organic photovoltaic devices with Ga-doped ZnO electrode

J. Owen; M. S. Son; K. H. Yoo; B. D. Ahn; S. Y. Lee

doi:10.1063/1.2432951

Organic photovoltaic devices with Ga-doped ZnO electrode

J. Owen, M. S. Son, K. H. Yoo, B. D. Ahn, S. Y. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2 O3: Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35% was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4%. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.

Original language	English
Article number	033512
Journal	Applied Physics Letters
Volume	90
Issue number	3
DOIs	https://doi.org/10.1063/1.2432951
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work has been financially supported by Korea Science and Engineering Foundation through National Core Research Center for Nanomedical Technology (Grand No. R15-20040924-00000-0) and by the BK21 Project.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2432951

Cite this

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title = "Organic photovoltaic devices with Ga-doped ZnO electrode",

abstract = "The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2 O3: Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35% was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4%. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.",

author = "J. Owen and Son, {M. S.} and Yoo, {K. H.} and Ahn, {B. D.} and Lee, {S. Y.}",

note = "Funding Information: This work has been financially supported by Korea Science and Engineering Foundation through National Core Research Center for Nanomedical Technology (Grand No. R15-20040924-00000-0) and by the BK21 Project.",

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AU - Owen, J.

AU - Son, M. S.

AU - Yoo, K. H.

AU - Ahn, B. D.

AU - Lee, S. Y.

N1 - Funding Information: This work has been financially supported by Korea Science and Engineering Foundation through National Core Research Center for Nanomedical Technology (Grand No. R15-20040924-00000-0) and by the BK21 Project.

PY - 2007

Y1 - 2007

N2 - The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2 O3: Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35% was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4%. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.

AB - The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2 O3: Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35% was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4%. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.

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Organic photovoltaic devices with Ga-doped ZnO electrode

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

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