Organic photovoltaic devices with Ga-doped ZnO electrode

J. Owen, M. S. Son, K. H. Yoo, B. D. Ahn, S. Y. Lee

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2 O3: Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35% was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4%. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.

Original languageEnglish
Article number033512
JournalApplied Physics Letters
Volume90
Issue number3
DOIs
Publication statusPublished - 2007 Jan 29

Fingerprint

electrodes
passivity
anodes
cathodes
conduction
atmospheres
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Owen, J. ; Son, M. S. ; Yoo, K. H. ; Ahn, B. D. ; Lee, S. Y. / Organic photovoltaic devices with Ga-doped ZnO electrode. In: Applied Physics Letters. 2007 ; Vol. 90, No. 3.
@article{5fe9b96f26264e9fba0f5fa6c4e00e13,
title = "Organic photovoltaic devices with Ga-doped ZnO electrode",
abstract = "The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2 O3: Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35{\%} was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4{\%}. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.",
author = "J. Owen and Son, {M. S.} and Yoo, {K. H.} and Ahn, {B. D.} and Lee, {S. Y.}",
year = "2007",
month = "1",
day = "29",
doi = "10.1063/1.2432951",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

Organic photovoltaic devices with Ga-doped ZnO electrode. / Owen, J.; Son, M. S.; Yoo, K. H.; Ahn, B. D.; Lee, S. Y.

In: Applied Physics Letters, Vol. 90, No. 3, 033512, 29.01.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Organic photovoltaic devices with Ga-doped ZnO electrode

AU - Owen, J.

AU - Son, M. S.

AU - Yoo, K. H.

AU - Ahn, B. D.

AU - Lee, S. Y.

PY - 2007/1/29

Y1 - 2007/1/29

N2 - The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2 O3: Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35% was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4%. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.

AB - The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2 O3: Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35% was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4%. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.

UR - http://www.scopus.com/inward/record.url?scp=33846456582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846456582&partnerID=8YFLogxK

U2 - 10.1063/1.2432951

DO - 10.1063/1.2432951

M3 - Article

AN - SCOPUS:33846456582

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 033512

ER -