Organic thin film transistors fabricated with a triisopropylsilyl-pentacene active channel layer and multi stacked oxide electrodes

Jin Woo Han, Ji Yun Chun, Chul Ho Ok, Dae Shik Seo

Research output: Contribution to journalArticle

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Abstract

We report the fabrication of triisopropylsilyl (TIPS)-pentacene-based thin-film transistors (TFTs) consisting of a nickel oxide-indium tin oxide (NIO-ITO) mutti stacked source/drain (S/D) electrode, a poly(4-vinylphenol) (PVP) gate dielectric, and a Ni gate electrode. The NiO-ITO multi stacked S/D electrode work function agrees well with to that of the TIPS-pentacene active channel layer. The TlPS-pentacene-based TFT maximum saturation current is about 9.1 μA at a gate bias of -40 V, representing a high field effect mobility of 0.03 cm2 V-1 s-1 in the dark, and the on/off current ratio TFT is about 105. We concluded that combining the NiO-ITO multi stacked S/D electrodes with PVP for the gate dielectric yields a high-quality TIPS-pentacene-based TFT.

Original languageEnglish
Article number010205
JournalJapanese journal of applied physics
Volume48
Issue number1
DOIs
Publication statusPublished - 2009 Jan 20

Fingerprint

Thin film transistors
transistors
Electrodes
Oxides
electrodes
oxides
Gate dielectrics
thin films
ITO (semiconductors)
Nickel oxide
nickel oxides
Tin oxides
indium oxides
Indium
tin oxides
saturation
Fabrication
fabrication

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Organic thin film transistors fabricated with a triisopropylsilyl-pentacene active channel layer and multi stacked oxide electrodes",
abstract = "We report the fabrication of triisopropylsilyl (TIPS)-pentacene-based thin-film transistors (TFTs) consisting of a nickel oxide-indium tin oxide (NIO-ITO) mutti stacked source/drain (S/D) electrode, a poly(4-vinylphenol) (PVP) gate dielectric, and a Ni gate electrode. The NiO-ITO multi stacked S/D electrode work function agrees well with to that of the TIPS-pentacene active channel layer. The TlPS-pentacene-based TFT maximum saturation current is about 9.1 μA at a gate bias of -40 V, representing a high field effect mobility of 0.03 cm2 V-1 s-1 in the dark, and the on/off current ratio TFT is about 105. We concluded that combining the NiO-ITO multi stacked S/D electrodes with PVP for the gate dielectric yields a high-quality TIPS-pentacene-based TFT.",
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year = "2009",
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Organic thin film transistors fabricated with a triisopropylsilyl-pentacene active channel layer and multi stacked oxide electrodes. / Han, Jin Woo; Chun, Ji Yun; Ok, Chul Ho; Seo, Dae Shik.

In: Japanese journal of applied physics, Vol. 48, No. 1, 010205, 20.01.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Organic thin film transistors fabricated with a triisopropylsilyl-pentacene active channel layer and multi stacked oxide electrodes

AU - Han, Jin Woo

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AU - Ok, Chul Ho

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N2 - We report the fabrication of triisopropylsilyl (TIPS)-pentacene-based thin-film transistors (TFTs) consisting of a nickel oxide-indium tin oxide (NIO-ITO) mutti stacked source/drain (S/D) electrode, a poly(4-vinylphenol) (PVP) gate dielectric, and a Ni gate electrode. The NiO-ITO multi stacked S/D electrode work function agrees well with to that of the TIPS-pentacene active channel layer. The TlPS-pentacene-based TFT maximum saturation current is about 9.1 μA at a gate bias of -40 V, representing a high field effect mobility of 0.03 cm2 V-1 s-1 in the dark, and the on/off current ratio TFT is about 105. We concluded that combining the NiO-ITO multi stacked S/D electrodes with PVP for the gate dielectric yields a high-quality TIPS-pentacene-based TFT.

AB - We report the fabrication of triisopropylsilyl (TIPS)-pentacene-based thin-film transistors (TFTs) consisting of a nickel oxide-indium tin oxide (NIO-ITO) mutti stacked source/drain (S/D) electrode, a poly(4-vinylphenol) (PVP) gate dielectric, and a Ni gate electrode. The NiO-ITO multi stacked S/D electrode work function agrees well with to that of the TIPS-pentacene active channel layer. The TlPS-pentacene-based TFT maximum saturation current is about 9.1 μA at a gate bias of -40 V, representing a high field effect mobility of 0.03 cm2 V-1 s-1 in the dark, and the on/off current ratio TFT is about 105. We concluded that combining the NiO-ITO multi stacked S/D electrodes with PVP for the gate dielectric yields a high-quality TIPS-pentacene-based TFT.

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