Organic thin film transistors fabricated with a triisopropylsilyl-pentacene active channel layer and multi stacked oxide electrodes

Jin Woo Han, Ji Yun Chun, Chul Ho Ok, Dae Shik Seo

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Abstract

We report the fabrication of triisopropylsilyl (TIPS)-pentacene-based thin-film transistors (TFTs) consisting of a nickel oxide-indium tin oxide (NIO-ITO) mutti stacked source/drain (S/D) electrode, a poly(4-vinylphenol) (PVP) gate dielectric, and a Ni gate electrode. The NiO-ITO multi stacked S/D electrode work function agrees well with to that of the TIPS-pentacene active channel layer. The TlPS-pentacene-based TFT maximum saturation current is about 9.1 μA at a gate bias of -40 V, representing a high field effect mobility of 0.03 cm2 V-1 s-1 in the dark, and the on/off current ratio TFT is about 105. We concluded that combining the NiO-ITO multi stacked S/D electrodes with PVP for the gate dielectric yields a high-quality TIPS-pentacene-based TFT.

Original languageEnglish
Article number010205
JournalJapanese journal of applied physics
Volume48
Issue number1
DOIs
Publication statusPublished - 2009 Jan 20

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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