Organic thin film transistors fabricated with soluble pentacene active channel layer and NiOx electrodes

Jin Woo Lee, Jin Woo Han, Sang Kuk Lee, Jeong Min Han, Byung Moo Moon, Dae Shik Seo, Jae Hyung Kim

Research output: Contribution to journalArticlepeer-review


We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of NiOx, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric, and gate electrode, respectively. The NiOx S/D electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacene channel by sputter deposited of NiO target and show a moderately low but still effective transmittance of65% in the visible range along with a good sheet resistance of40/. The maximum saturation current of our soluble pentacene-based TFT is about 15A at a gate bias of-30V showing a high field effect mobility of 0.03cm2/Vs in the dark, and the on/off current ratio of our TFT is about 104. It is concluded that jointly adopting NiOx for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.

Original languageEnglish
Pages (from-to)276/[598]-281/[603]
JournalMolecular Crystals and Liquid Crystals
Publication statusPublished - 2009 Feb

Bibliographical note

Funding Information:
This work has been supported by the Ministry of Information & Communications of Korea under the Information Technology Research Center (ITRC) Program. Address correspondence to Prof. Dae Shik Seo, Department of Electrical Engineering, Yonsei University, Seoul 120-749, Korea (ROK). E-mail:

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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