We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of NiOx, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric, and gate electrode, respectively. The NiOx S/D electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacene channel by sputter deposited of NiO target and show a moderately low but still effective transmittance of65% in the visible range along with a good sheet resistance of40/. The maximum saturation current of our soluble pentacene-based TFT is about 15A at a gate bias of-30V showing a high field effect mobility of 0.03cm2/Vs in the dark, and the on/off current ratio of our TFT is about 104. It is concluded that jointly adopting NiOx for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.
Bibliographical noteFunding Information:
This work has been supported by the Ministry of Information & Communications of Korea under the Information Technology Research Center (ITRC) Program. Address correspondence to Prof. Dae Shik Seo, Department of Electrical Engineering, Yonsei University, Seoul 120-749, Korea (ROK). E-mail: email@example.com
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics