Organic/inorganic hybrid passivation layers for organic thin-film transistors

Woo Jin Kim, Chang Su Kim, Sung Jin Jo, Hyeon Seok Hwang, Seung Yoon Ryu, Hong Koo Baik

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the fabrication of OTFTs with organic/inorganic passivation layers to enhance the long-term stability of devices. In order to obtain a flat surface on which an inorganic thin film could be deposited, an organic smoothing layer was employed. The planarization of the rough pentacene surface would induce a very smooth and dense surface for the inorganic layer as well. When the SnO2/PVA film was introduced as a component of the encapsulation, greatly enhanced barrier properties were observed. Our work demonstrated that organic/inorganic hybrid passivation layers are a promising technique for a long-term protection of OTFTs.

Original languageEnglish
Article number075034
JournalSemiconductor Science and Technology
Volume23
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

Fingerprint

Thin film transistors
Passivation
passivity
transistors
thin films
Encapsulation
smoothing
Fabrication
flat surfaces
Thin films
fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, Woo Jin ; Kim, Chang Su ; Jo, Sung Jin ; Hwang, Hyeon Seok ; Ryu, Seung Yoon ; Baik, Hong Koo. / Organic/inorganic hybrid passivation layers for organic thin-film transistors. In: Semiconductor Science and Technology. 2008 ; Vol. 23, No. 7.
@article{33ae1c1377214afa9a4d0b5d2933af4e,
title = "Organic/inorganic hybrid passivation layers for organic thin-film transistors",
abstract = "We report on the fabrication of OTFTs with organic/inorganic passivation layers to enhance the long-term stability of devices. In order to obtain a flat surface on which an inorganic thin film could be deposited, an organic smoothing layer was employed. The planarization of the rough pentacene surface would induce a very smooth and dense surface for the inorganic layer as well. When the SnO2/PVA film was introduced as a component of the encapsulation, greatly enhanced barrier properties were observed. Our work demonstrated that organic/inorganic hybrid passivation layers are a promising technique for a long-term protection of OTFTs.",
author = "Kim, {Woo Jin} and Kim, {Chang Su} and Jo, {Sung Jin} and Hwang, {Hyeon Seok} and Ryu, {Seung Yoon} and Baik, {Hong Koo}",
year = "2008",
month = "7",
day = "1",
doi = "10.1088/0268-1242/23/7/075034",
language = "English",
volume = "23",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "7",

}

Organic/inorganic hybrid passivation layers for organic thin-film transistors. / Kim, Woo Jin; Kim, Chang Su; Jo, Sung Jin; Hwang, Hyeon Seok; Ryu, Seung Yoon; Baik, Hong Koo.

In: Semiconductor Science and Technology, Vol. 23, No. 7, 075034, 01.07.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Organic/inorganic hybrid passivation layers for organic thin-film transistors

AU - Kim, Woo Jin

AU - Kim, Chang Su

AU - Jo, Sung Jin

AU - Hwang, Hyeon Seok

AU - Ryu, Seung Yoon

AU - Baik, Hong Koo

PY - 2008/7/1

Y1 - 2008/7/1

N2 - We report on the fabrication of OTFTs with organic/inorganic passivation layers to enhance the long-term stability of devices. In order to obtain a flat surface on which an inorganic thin film could be deposited, an organic smoothing layer was employed. The planarization of the rough pentacene surface would induce a very smooth and dense surface for the inorganic layer as well. When the SnO2/PVA film was introduced as a component of the encapsulation, greatly enhanced barrier properties were observed. Our work demonstrated that organic/inorganic hybrid passivation layers are a promising technique for a long-term protection of OTFTs.

AB - We report on the fabrication of OTFTs with organic/inorganic passivation layers to enhance the long-term stability of devices. In order to obtain a flat surface on which an inorganic thin film could be deposited, an organic smoothing layer was employed. The planarization of the rough pentacene surface would induce a very smooth and dense surface for the inorganic layer as well. When the SnO2/PVA film was introduced as a component of the encapsulation, greatly enhanced barrier properties were observed. Our work demonstrated that organic/inorganic hybrid passivation layers are a promising technique for a long-term protection of OTFTs.

UR - http://www.scopus.com/inward/record.url?scp=47749109117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47749109117&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/23/7/075034

DO - 10.1088/0268-1242/23/7/075034

M3 - Article

AN - SCOPUS:47749109117

VL - 23

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

M1 - 075034

ER -