We demonstrated a vertically stacked complementary thin-film transistor inverter (VS-CTFT inverter) for the purpose of maximizing potentials beyond logic applications by including photo-gating and ferroelectric memory operation with properly selected organic and oxide materials. For our VS-CTFT inverter for logic and photo-gating, we used a thermally-evaporated p-channel pentacene layer, sputter-deposited n-channel GaZnSn-based oxide (GZTO), and atomic layer deposited (ALD) Al2O3 dielectric. As a more advanced hybrid approach, we also adopted a ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] layer for a CTFT nonvolatile memory inverter with a pentacene memory TFT which is vertically stacked on a top-gate GZTO TFT. Our VS-CTFT inverter nicely displays effective photo- and electrical-gating with a high voltage gain, dynamically operating in the low-voltage regime of 3, 5, and 8 V. The ferroelectric memory inverter as an ultimate hybrid device form demonstrates promising retention properties as triggered by ±20 V gate pulses.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from NRF (NRL program, No. 2011-0000375), BK21 Project, the 21st Century Frontier R&D Program funded by the MKE (Information Display R&D center, F0004022-2009). C.H. Park thanks for the Seoul Science Fellowship and Seoam Fellowship.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering