Organization of pentacene molecules on anisotropic ultrathin HfO 2 / Al2O3 templates for organic thin-film transistors using an ion-beam treatment

Young Hwan Kim, Jae Hong Kwon, Sang Il Shin, Byeong Yun Oh, Hong Gyu Park, Kyeong Kap Paek, Byeong Kwon Ju, Dae-Shik Seo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This article investigates improving organic thin-film transistor (OTFT) characteristics by using an alignable high dielectric constant film to control the self-organization of pentacene molecules. The process, based on the growth of a pentacene film with high vacuum sublimation, is a method of self-organization that uses ion-beam (IB) bombardment of the HfO2 / Al2O3 surface that serves as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB increases the structural anisotropy of the HfO2 / Al2O3 film, and X-ray diffraction patterns show that increasing the anisotropy may lead to the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of 2.3× 10-3 cm2 V-1 s-1 was achieved, which is significantly different from the mobility in pentacene films that are not aligned. The proposed OTFT devices with an ultrathin HfO2 structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number8
DOIs
Publication statusPublished - 2009 Jun 29

Fingerprint

Thin film transistors
Ion beams
transistors
templates
ion beams
Molecules
Gate dielectrics
thin films
molecules
Anisotropy
anisotropy
Sublimation
high vacuum
sublimation
low voltage
Diffraction patterns
bombardment
Monolayers
x rays
Permittivity

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Young Hwan ; Kwon, Jae Hong ; Shin, Sang Il ; Oh, Byeong Yun ; Park, Hong Gyu ; Paek, Kyeong Kap ; Ju, Byeong Kwon ; Seo, Dae-Shik. / Organization of pentacene molecules on anisotropic ultrathin HfO 2 / Al2O3 templates for organic thin-film transistors using an ion-beam treatment. In: Electrochemical and Solid-State Letters. 2009 ; Vol. 12, No. 8.
@article{95cc718a5e534cf78d1634faeaf6278a,
title = "Organization of pentacene molecules on anisotropic ultrathin HfO 2 / Al2O3 templates for organic thin-film transistors using an ion-beam treatment",
abstract = "This article investigates improving organic thin-film transistor (OTFT) characteristics by using an alignable high dielectric constant film to control the self-organization of pentacene molecules. The process, based on the growth of a pentacene film with high vacuum sublimation, is a method of self-organization that uses ion-beam (IB) bombardment of the HfO2 / Al2O3 surface that serves as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB increases the structural anisotropy of the HfO2 / Al2O3 film, and X-ray diffraction patterns show that increasing the anisotropy may lead to the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of 2.3× 10-3 cm2 V-1 s-1 was achieved, which is significantly different from the mobility in pentacene films that are not aligned. The proposed OTFT devices with an ultrathin HfO2 structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.",
author = "Kim, {Young Hwan} and Kwon, {Jae Hong} and Shin, {Sang Il} and Oh, {Byeong Yun} and Park, {Hong Gyu} and Paek, {Kyeong Kap} and Ju, {Byeong Kwon} and Dae-Shik Seo",
year = "2009",
month = "6",
day = "29",
doi = "10.1149/1.3148274",
language = "English",
volume = "12",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

Organization of pentacene molecules on anisotropic ultrathin HfO 2 / Al2O3 templates for organic thin-film transistors using an ion-beam treatment. / Kim, Young Hwan; Kwon, Jae Hong; Shin, Sang Il; Oh, Byeong Yun; Park, Hong Gyu; Paek, Kyeong Kap; Ju, Byeong Kwon; Seo, Dae-Shik.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 8, 29.06.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Organization of pentacene molecules on anisotropic ultrathin HfO 2 / Al2O3 templates for organic thin-film transistors using an ion-beam treatment

AU - Kim, Young Hwan

AU - Kwon, Jae Hong

AU - Shin, Sang Il

AU - Oh, Byeong Yun

AU - Park, Hong Gyu

AU - Paek, Kyeong Kap

AU - Ju, Byeong Kwon

AU - Seo, Dae-Shik

PY - 2009/6/29

Y1 - 2009/6/29

N2 - This article investigates improving organic thin-film transistor (OTFT) characteristics by using an alignable high dielectric constant film to control the self-organization of pentacene molecules. The process, based on the growth of a pentacene film with high vacuum sublimation, is a method of self-organization that uses ion-beam (IB) bombardment of the HfO2 / Al2O3 surface that serves as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB increases the structural anisotropy of the HfO2 / Al2O3 film, and X-ray diffraction patterns show that increasing the anisotropy may lead to the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of 2.3× 10-3 cm2 V-1 s-1 was achieved, which is significantly different from the mobility in pentacene films that are not aligned. The proposed OTFT devices with an ultrathin HfO2 structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

AB - This article investigates improving organic thin-film transistor (OTFT) characteristics by using an alignable high dielectric constant film to control the self-organization of pentacene molecules. The process, based on the growth of a pentacene film with high vacuum sublimation, is a method of self-organization that uses ion-beam (IB) bombardment of the HfO2 / Al2O3 surface that serves as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB increases the structural anisotropy of the HfO2 / Al2O3 film, and X-ray diffraction patterns show that increasing the anisotropy may lead to the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of 2.3× 10-3 cm2 V-1 s-1 was achieved, which is significantly different from the mobility in pentacene films that are not aligned. The proposed OTFT devices with an ultrathin HfO2 structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

UR - http://www.scopus.com/inward/record.url?scp=67649198790&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649198790&partnerID=8YFLogxK

U2 - 10.1149/1.3148274

DO - 10.1149/1.3148274

M3 - Article

VL - 12

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 8

ER -