Abstract
The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.
| Original language | English |
|---|---|
| Pages (from-to) | 1625-1629 |
| Number of pages | 5 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 5 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 Mar 13 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
Cite this
}
Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel. / Park, Ji Hoon; Lee, Young Tack; Lee, Hee Sung; Lee, Jun Young; Lee, Kimoon; Lee, Gyu Baek; Han, Jiwon; Kim, Tae Woong; Im, Seongil.
In: ACS Applied Materials and Interfaces, Vol. 5, No. 5, 13.03.2013, p. 1625-1629.Research output: Contribution to journal › Article
TY - JOUR
T1 - Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel
AU - Park, Ji Hoon
AU - Lee, Young Tack
AU - Lee, Hee Sung
AU - Lee, Jun Young
AU - Lee, Kimoon
AU - Lee, Gyu Baek
AU - Han, Jiwon
AU - Kim, Tae Woong
AU - Im, Seongil
PY - 2013/3/13
Y1 - 2013/3/13
N2 - The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.
AB - The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.
UR - http://www.scopus.com/inward/record.url?scp=84875026116&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875026116&partnerID=8YFLogxK
U2 - 10.1021/am3022703
DO - 10.1021/am3022703
M3 - Article
C2 - 23421395
AN - SCOPUS:84875026116
VL - 5
SP - 1625
EP - 1629
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 5
ER -