Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel

Ji Hoon Park, Young Tack Lee, Hee Sung Lee, Jun Young Lee, Kimoon Lee, Gyu Baek Lee, Jiwon Han, Tae Woong Kim, Seongil Im

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

Original languageEnglish
Pages (from-to)1625-1629
Number of pages5
JournalACS Applied Materials and Interfaces
Volume5
Issue number5
DOIs
Publication statusPublished - 2013 Mar 13

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Thin film transistors
Polymer blends
Molecules
Polymethyl Methacrylate
Hole traps
Threshold voltage
Esters
Spectroscopy
Defects
Water
bis(triisopropylsilylethynyl)pentacene

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Park, Ji Hoon ; Lee, Young Tack ; Lee, Hee Sung ; Lee, Jun Young ; Lee, Kimoon ; Lee, Gyu Baek ; Han, Jiwon ; Kim, Tae Woong ; Im, Seongil. / Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel. In: ACS Applied Materials and Interfaces. 2013 ; Vol. 5, No. 5. pp. 1625-1629.
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abstract = "The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as {"}back-channel{"} effect, which is attributed to the water molecules trapped on the TFT surface.",
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Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel. / Park, Ji Hoon; Lee, Young Tack; Lee, Hee Sung; Lee, Jun Young; Lee, Kimoon; Lee, Gyu Baek; Han, Jiwon; Kim, Tae Woong; Im, Seongil.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 5, 13.03.2013, p. 1625-1629.

Research output: Contribution to journalArticle

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AU - Park, Ji Hoon

AU - Lee, Young Tack

AU - Lee, Hee Sung

AU - Lee, Jun Young

AU - Lee, Kimoon

AU - Lee, Gyu Baek

AU - Han, Jiwon

AU - Kim, Tae Woong

AU - Im, Seongil

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AB - The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

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