Abstract
The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.
Original language | English |
---|---|
Pages (from-to) | 1625-1629 |
Number of pages | 5 |
Journal | ACS Applied Materials and Interfaces |
Volume | 5 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2013 Mar 13 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)