Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel

Ji Hoon Park; Young Tack Lee; Hee Sung Lee; Jun Young Lee; Kimoon Lee; Gyu Baek Lee; Jiwon Han; Tae Woong Kim; Seongil Im

doi:10.1021/am3022703

Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel

Ji Hoon Park, Young Tack Lee, Hee Sung Lee, Jun Young Lee, Kimoon Lee, Gyu Baek Lee, Jiwon Han, Tae Woong Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (V_th) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V _th shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

Original language	English
Pages (from-to)	1625-1629
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	5
DOIs	https://doi.org/10.1021/am3022703
Publication status	Published - 2013 Mar 13

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/am3022703

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title = "Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel",

abstract = "The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as {"}back-channel{"} effect, which is attributed to the water molecules trapped on the TFT surface.",

author = "Park, {Ji Hoon} and Lee, {Young Tack} and Lee, {Hee Sung} and Lee, {Jun Young} and Kimoon Lee and Lee, {Gyu Baek} and Jiwon Han and Kim, {Tae Woong} and Seongil Im",

year = "2013",

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doi = "10.1021/am3022703",

language = "English",

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T1 - Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel

AU - Park, Ji Hoon

AU - Lee, Young Tack

AU - Lee, Hee Sung

AU - Lee, Jun Young

AU - Lee, Kimoon

AU - Lee, Gyu Baek

AU - Han, Jiwon

AU - Kim, Tae Woong

AU - Im, Seongil

PY - 2013/3/13

Y1 - 2013/3/13

N2 - The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

AB - The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little V th shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

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Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel

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