Origin of channel/dielectric interfacial trap states modification by ultraviolet irradiation on organic thin-film transistors

Kimoon Lee, Seongil Im

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The authors report on the origin of channel/dielectric interfacial states modified by ultraviolet (UV) irradiation on pentacene thin-film transistors (TFTs) with poly-4-vinylphenol and AlOxdouble gate dielectric. Exposing the device to 352 nm UV irradiation on caused a positive threshold voltage (Vth) shift, and then photo-excited charge-collection spectroscopy (PECCS) was applied to the device to clarify the changes of the interfacial density of states (DOS) as the origin of Vthmodification. From the PECCS measurement, it could be probed that there was a drastic decrease in DOS for deep traps at ∼ 1.31 and ∼1.38 eV above the highest occupied molecular orbital level of pentacene. Consequently, we can conclude that the positive shift of Vthfor pentacene-TFT by UV irradiation results from the elimination of deep hole traps, which could be introduced by the interfacial dipoles at the channel/dielectric interface.

Original languageEnglish
Pages (from-to)2886-2889
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume211
Issue number12
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Thin film transistors
transistors
traps
Irradiation
irradiation
thin films
Spectroscopy
Hole traps
shift
Gate dielectrics
Molecular orbitals
Threshold voltage
threshold voltage
spectroscopy
elimination
molecular orbitals
dipoles
pentacene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

@article{f7f947d86abe4c79a538498073a6e8d7,
title = "Origin of channel/dielectric interfacial trap states modification by ultraviolet irradiation on organic thin-film transistors",
abstract = "The authors report on the origin of channel/dielectric interfacial states modified by ultraviolet (UV) irradiation on pentacene thin-film transistors (TFTs) with poly-4-vinylphenol and AlOxdouble gate dielectric. Exposing the device to 352 nm UV irradiation on caused a positive threshold voltage (Vth) shift, and then photo-excited charge-collection spectroscopy (PECCS) was applied to the device to clarify the changes of the interfacial density of states (DOS) as the origin of Vthmodification. From the PECCS measurement, it could be probed that there was a drastic decrease in DOS for deep traps at ∼ 1.31 and ∼1.38 eV above the highest occupied molecular orbital level of pentacene. Consequently, we can conclude that the positive shift of Vthfor pentacene-TFT by UV irradiation results from the elimination of deep hole traps, which could be introduced by the interfacial dipoles at the channel/dielectric interface.",
author = "Kimoon Lee and Seongil Im",
year = "2014",
month = "1",
day = "1",
doi = "10.1002/pssa.201431457",
language = "English",
volume = "211",
pages = "2886--2889",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "12",

}

TY - JOUR

T1 - Origin of channel/dielectric interfacial trap states modification by ultraviolet irradiation on organic thin-film transistors

AU - Lee, Kimoon

AU - Im, Seongil

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The authors report on the origin of channel/dielectric interfacial states modified by ultraviolet (UV) irradiation on pentacene thin-film transistors (TFTs) with poly-4-vinylphenol and AlOxdouble gate dielectric. Exposing the device to 352 nm UV irradiation on caused a positive threshold voltage (Vth) shift, and then photo-excited charge-collection spectroscopy (PECCS) was applied to the device to clarify the changes of the interfacial density of states (DOS) as the origin of Vthmodification. From the PECCS measurement, it could be probed that there was a drastic decrease in DOS for deep traps at ∼ 1.31 and ∼1.38 eV above the highest occupied molecular orbital level of pentacene. Consequently, we can conclude that the positive shift of Vthfor pentacene-TFT by UV irradiation results from the elimination of deep hole traps, which could be introduced by the interfacial dipoles at the channel/dielectric interface.

AB - The authors report on the origin of channel/dielectric interfacial states modified by ultraviolet (UV) irradiation on pentacene thin-film transistors (TFTs) with poly-4-vinylphenol and AlOxdouble gate dielectric. Exposing the device to 352 nm UV irradiation on caused a positive threshold voltage (Vth) shift, and then photo-excited charge-collection spectroscopy (PECCS) was applied to the device to clarify the changes of the interfacial density of states (DOS) as the origin of Vthmodification. From the PECCS measurement, it could be probed that there was a drastic decrease in DOS for deep traps at ∼ 1.31 and ∼1.38 eV above the highest occupied molecular orbital level of pentacene. Consequently, we can conclude that the positive shift of Vthfor pentacene-TFT by UV irradiation results from the elimination of deep hole traps, which could be introduced by the interfacial dipoles at the channel/dielectric interface.

UR - http://www.scopus.com/inward/record.url?scp=84916211483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84916211483&partnerID=8YFLogxK

U2 - 10.1002/pssa.201431457

DO - 10.1002/pssa.201431457

M3 - Article

VL - 211

SP - 2886

EP - 2889

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 12

ER -