Origin of p-type conductivity for N-doped ZnO nanostructure synthesized by MOCVD method

Sachindranath Das, Subhasish Patra, Jyoti Prakash Kar, Atanu Roy, Apurba Ray, Jae Min Myoung

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Abstract

Undoped and nitrogen-doped ZnO nanostructures were grown by Metal Organic Chemical Vapor Deposition method onto Sapphire substrates using NH3 gas as N source. Structural and optical characterizations of undoped and N-doped ZnO nanostructures were done. The XRD studies show that a few peaks arose and the relative intensities of other peaks [in comparison to (002)] increase with higher incorporation of N. PL studies revealed that the width and intensity of PL peaks are strongly influenced by NH3 concentration during growth, which creates a few donor levels (arising due to structural defects) as well as acceptor levels (arising due to N doping). With increase of NH3 concentration during deposition, O substitution by N increases and more NO defects appear in PL spectrum. The effect of oxygen vacancies was compensated by the effect of defect levels appears due to N doping, which causes the p-type nature of N-doped ZnO. The p-type nature of the N-doped ZnO nanostructures was also confirmed by using Hall-effect measurement.

Original languageEnglish
Article number19591
Pages (from-to)701-704
Number of pages4
JournalMaterials Letters
Volume161
DOIs
Publication statusPublished - 2015 Dec 15

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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