Origin of the enhanced electrical characteristics of BaTiO3-based thermistors by sputtered Al and Ni-Cu buffer electrode films

Hong Je Choi, Jin Woo Jang, Myoung Pyo Chun, Yong Soo Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Significant improvements in the characteristics of positive temperature coefficient of resistance for BaTiO3/Ag-based temperature sensors are reported by utilizing buffer electrode films of Al and Ni-Cu. The Ni-Cu buffer layer was more effective in reducing room temperature electrical resistance than the Al layer, which results in a significant increase in the resistance jump ratio. As a promising example, the use of a 541 nm thick Ni-Cu buffer film demonstrated a substantially increased log(Rmax/Rmin) value of 3.15, compared to 1.80 for only the Ag electrode without the buffer layer. Origin of the enhancement by Ni-Cu is attributed due to the improved ohmic behavior with a lowered Schottky barrier potential at the ceramic-electrode interfaces. The thicker layer is preferred regardless of the type of buffer layer since it demonstrates a lower interfacial electrical resistance as confirmed by the impedance analysis.

Original languageEnglish
Pages (from-to)435-439
Number of pages5
JournalCurrent Applied Physics
Volume16
Issue number4
DOIs
Publication statusPublished - 2016 Apr 1

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Thermistors
thermistors
Buffer layers
Buffers
Acoustic impedance
buffers
Electrodes
electrodes
Positive temperature coefficient
electrical resistance
Temperature sensors
temperature sensors
impedance
ceramics
augmentation
room temperature
coefficients
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Significant improvements in the characteristics of positive temperature coefficient of resistance for BaTiO3/Ag-based temperature sensors are reported by utilizing buffer electrode films of Al and Ni-Cu. The Ni-Cu buffer layer was more effective in reducing room temperature electrical resistance than the Al layer, which results in a significant increase in the resistance jump ratio. As a promising example, the use of a 541 nm thick Ni-Cu buffer film demonstrated a substantially increased log(Rmax/Rmin) value of 3.15, compared to 1.80 for only the Ag electrode without the buffer layer. Origin of the enhancement by Ni-Cu is attributed due to the improved ohmic behavior with a lowered Schottky barrier potential at the ceramic-electrode interfaces. The thicker layer is preferred regardless of the type of buffer layer since it demonstrates a lower interfacial electrical resistance as confirmed by the impedance analysis.",
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Origin of the enhanced electrical characteristics of BaTiO3-based thermistors by sputtered Al and Ni-Cu buffer electrode films. / Choi, Hong Je; Jang, Jin Woo; Chun, Myoung Pyo; Cho, Yong Soo.

In: Current Applied Physics, Vol. 16, No. 4, 01.04.2016, p. 435-439.

Research output: Contribution to journalArticle

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