Origins of band-gap renormalization in degenerately doped semiconductors

Aron Walsh, Juarez L.F. Da Silva, Su Huai Wei

Research output: Contribution to journalArticle

191 Citations (Scopus)

Abstract

Degenerate n -type doping of semiconductors results in optical band-gap widening through occupation of the conduction band, which is partially offset by the so-called band-gap renormalization. From investigation of the magnitude and origin of these shifts through density-functional band-structure theory, we demonstrate that the key contribution to renormalization arises from the nonparabolic nature of the host conduction band but not the rigid shift of the band edges, as is the current paradigm. Furthermore, the carrier dependence of the band-gap widening is highly sensitive to the electronic states of the dopant ion, which can be involved in a significant reconstruction of the lower conduction band.

Original languageEnglish
Article number075211
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number7
DOIs
Publication statusPublished - 2008 Aug 28

Fingerprint

Conduction bands
Energy gap
Semiconductor materials
conduction bands
Doping (additives)
Optical band gaps
Electronic states
Band structure
Ions
shift
occupation
electronics
ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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Origins of band-gap renormalization in degenerately doped semiconductors. / Walsh, Aron; Da Silva, Juarez L.F.; Wei, Su Huai.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 78, No. 7, 075211, 28.08.2008.

Research output: Contribution to journalArticle

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