Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy after annealing

Hyunchul Sohn, E. R. Weber, Shinji Nozaki, Kiyoshi Takahashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Using double crystal x-ray diffractometry (XRD) and transmission electron microscopy (TEM), the annealing effects on heavily carbon-doped GaAs films were studied. From isochronal annealing, the evolution of compressive strain in carbon-doped GaAs films was observed by XRD. From cross-sectional TEM, unusual misfit dislocations with extra-half planes on the GaAs side were observed in the sample annealed at 900°C for 30 min in addition to normal misfit dislocations with extra-half planes on the film side. A possible mechanism for the formation of such misfit dislocations is proposed based on the over-relaxation of misfit strain in the film.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995 Dec 1

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molecular beam epitaxy
half planes
annealing
carbon
transmission electron microscopy
x rays
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy after annealing",
abstract = "Using double crystal x-ray diffractometry (XRD) and transmission electron microscopy (TEM), the annealing effects on heavily carbon-doped GaAs films were studied. From isochronal annealing, the evolution of compressive strain in carbon-doped GaAs films was observed by XRD. From cross-sectional TEM, unusual misfit dislocations with extra-half planes on the GaAs side were observed in the sample annealed at 900°C for 30 min in addition to normal misfit dislocations with extra-half planes on the film side. A possible mechanism for the formation of such misfit dislocations is proposed based on the over-relaxation of misfit strain in the film.",
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Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy after annealing. / Sohn, Hyunchul; Weber, E. R.; Nozaki, Shinji; Takahashi, Kiyoshi.

In: Applied Physics Letters, Vol. 67, 01.12.1995.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy after annealing

AU - Sohn, Hyunchul

AU - Weber, E. R.

AU - Nozaki, Shinji

AU - Takahashi, Kiyoshi

PY - 1995/12/1

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AB - Using double crystal x-ray diffractometry (XRD) and transmission electron microscopy (TEM), the annealing effects on heavily carbon-doped GaAs films were studied. From isochronal annealing, the evolution of compressive strain in carbon-doped GaAs films was observed by XRD. From cross-sectional TEM, unusual misfit dislocations with extra-half planes on the GaAs side were observed in the sample annealed at 900°C for 30 min in addition to normal misfit dislocations with extra-half planes on the film side. A possible mechanism for the formation of such misfit dislocations is proposed based on the over-relaxation of misfit strain in the film.

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