Abstract
Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.
| Original language | English |
|---|---|
| Pages (from-to) | 182-186 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 11 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2008 Oct |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Kim, S. Y., Kim, S. W., Chang, H. J., Seong, H. K., Choi, H. J., & Ko, D. H. (2008). Oxidation characteristics of Si0.85Ge0.15 nanowires. Materials Science in Semiconductor Processing, 11(5), 182-186. https://doi.org/10.1016/j.mssp.2008.11.009