Oxidation characteristics of Si0.85Ge0.15 nanowires

Sang Yeon Kim; Sun Wook Kim; Hyun Jin Chang; Han Kyu Seong; Heon Jin Choi; Dae Hong Ko

doi:10.1016/j.mssp.2008.11.009

Oxidation characteristics of Si_0.85Ge_0.15 nanowires

Sang Yeon Kim, Sun Wook Kim, Hyun Jin Chang, Han Kyu Seong, Heon Jin Choi, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Oxidation characteristics of Si_0.85Ge_0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si_0.85Ge_0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si_0.85Ge_0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si_0.85Ge_0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si_0.85Ge_0.15 nanowire resulted in the oxidation of germanium atoms.

Original language	English
Pages (from-to)	182-186
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.mssp.2008.11.009
Publication status	Published - 2008 Oct

Bibliographical note

Funding Information:
This work was partly supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction] and the industry–university cooperation project of the Samsung electronics.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2008.11.009

Cite this

@article{ae825c43641049678970e57e731f8d3b,

title = "Oxidation characteristics of Si0.85Ge0.15 nanowires",

abstract = "Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.",

author = "Kim, {Sang Yeon} and Kim, {Sun Wook} and Chang, {Hyun Jin} and Seong, {Han Kyu} and Choi, {Heon Jin} and Ko, {Dae Hong}",

note = "Funding Information: This work was partly supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction] and the industry–university cooperation project of the Samsung electronics.",

year = "2008",

month = oct,

doi = "10.1016/j.mssp.2008.11.009",

language = "English",

volume = "11",

pages = "182--186",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "5",

}

TY - JOUR

T1 - Oxidation characteristics of Si0.85Ge0.15 nanowires

AU - Kim, Sang Yeon

AU - Kim, Sun Wook

AU - Chang, Hyun Jin

AU - Seong, Han Kyu

AU - Choi, Heon Jin

AU - Ko, Dae Hong

N1 - Funding Information: This work was partly supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction] and the industry–university cooperation project of the Samsung electronics.

PY - 2008/10

Y1 - 2008/10

N2 - Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.

AB - Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.

UR - http://www.scopus.com/inward/record.url?scp=70349762942&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349762942&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2008.11.009

DO - 10.1016/j.mssp.2008.11.009

M3 - Article

AN - SCOPUS:70349762942

VL - 11

SP - 182

EP - 186

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 5

ER -