Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.
Bibliographical noteFunding Information:
This work was partly supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction] and the industry–university cooperation project of the Samsung electronics.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering