Abstract
Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.
| Original language | English |
|---|---|
| Pages (from-to) | 182-186 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 11 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2008 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Oxidation characteristics of Si0.85Ge0.15 nanowires. / Kim, Sang Yeon; Kim, Sun Wook; Chang, Hyun Jin; Seong, Han Kyu; Choi, Heon Jin; Ko, Dae Hong.
In: Materials Science in Semiconductor Processing, Vol. 11, No. 5, 01.10.2008, p. 182-186.Research output: Contribution to journal › Article
TY - JOUR
T1 - Oxidation characteristics of Si0.85Ge0.15 nanowires
AU - Kim, Sang Yeon
AU - Kim, Sun Wook
AU - Chang, Hyun Jin
AU - Seong, Han Kyu
AU - Choi, Heon Jin
AU - Ko, Dae Hong
PY - 2008/10/1
Y1 - 2008/10/1
N2 - Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.
AB - Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.
UR - http://www.scopus.com/inward/record.url?scp=70349762942&partnerID=8YFLogxK
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U2 - 10.1016/j.mssp.2008.11.009
DO - 10.1016/j.mssp.2008.11.009
M3 - Article
AN - SCOPUS:70349762942
VL - 11
SP - 182
EP - 186
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 5
ER -