Oxidation characteristics of Si0.85Ge0.15 nanowires

Sang Yeon Kim, Sun Wook Kim, Hyun Jin Chang, Han Kyu Seong, Heon-Jin Choi, Dae Hong Ko

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.

Original languageEnglish
Pages (from-to)182-186
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume11
Issue number5
DOIs
Publication statusPublished - 2008 Oct 1

Fingerprint

Nanowires
nanowires
Oxidation
oxidation
Oxides
Germanium
Transmission electron microscopy
transmission electron microscopy
oxides
furnaces
germanium
Furnaces
Vapors
vapors
tubes
Atoms
Liquids
liquids
atoms

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, Sang Yeon ; Kim, Sun Wook ; Chang, Hyun Jin ; Seong, Han Kyu ; Choi, Heon-Jin ; Ko, Dae Hong. / Oxidation characteristics of Si0.85Ge0.15 nanowires. In: Materials Science in Semiconductor Processing. 2008 ; Vol. 11, No. 5. pp. 182-186.
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Oxidation characteristics of Si0.85Ge0.15 nanowires. / Kim, Sang Yeon; Kim, Sun Wook; Chang, Hyun Jin; Seong, Han Kyu; Choi, Heon-Jin; Ko, Dae Hong.

In: Materials Science in Semiconductor Processing, Vol. 11, No. 5, 01.10.2008, p. 182-186.

Research output: Contribution to journalArticle

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T1 - Oxidation characteristics of Si0.85Ge0.15 nanowires

AU - Kim, Sang Yeon

AU - Kim, Sun Wook

AU - Chang, Hyun Jin

AU - Seong, Han Kyu

AU - Choi, Heon-Jin

AU - Ko, Dae Hong

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AB - Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor-liquid-solid (VLS) method and thermally oxidized at 925 °C for 1-8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.

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