Oxidation of Chemically‐Vapor‐Deposited Silicon Nitride and Slnglem‐Crystal Silicon

Doo Jin Choi, David B. Fischbach, William D. Scott

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Oxidation of {111} single‐crystal silicon and dense, chemically‐vapor‐deposited silicon nitride was done in clean silica tubes at temperatures of 1000° to woo°C. The oxidation rates of silicon nitride under various atmospheres (dry O2, wet O2, wet inert gas, and steam) were several orders of magnitude slower than those of silicon under the identical conditions. The activation energy for the oxidation of silicon nitride decreased from 330 to 259 kJ/mol in going from dry O2 to steam while that for Si decreased from 120 to 94 kJ/mol. The parabolic rate constant for Si increased linearly as the water vapor pressure increased. However, the parabolic rate constant for silicon nitride showed nonlinear dependency on the water vapor pressure in the presence of oxygen. The oxidation kinetics of silicon nitride is explained by the formation of nitrogen compounds (NO and NH3) at the reaction interface and the counterpermeation of these reaction products.

Original languageEnglish
Pages (from-to)1118-1123
Number of pages6
JournalJournal of the American Ceramic Society
Volume72
Issue number7
DOIs
Publication statusPublished - 1989 Jan 1

Fingerprint

Silicon
Silicon nitride
Steam
Oxidation
Vapor pressure
Water vapor
Rate constants
Nitrogen Compounds
Noble Gases
Nitrogen compounds
Inert gases
Reaction products
Silicon Dioxide
Activation energy
Silica
silicon nitride
Oxygen
Kinetics
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

@article{edfeec0b22fb4f50acf26956f1e9986e,
title = "Oxidation of Chemically‐Vapor‐Deposited Silicon Nitride and Slnglem‐Crystal Silicon",
abstract = "Oxidation of {111} single‐crystal silicon and dense, chemically‐vapor‐deposited silicon nitride was done in clean silica tubes at temperatures of 1000° to woo°C. The oxidation rates of silicon nitride under various atmospheres (dry O2, wet O2, wet inert gas, and steam) were several orders of magnitude slower than those of silicon under the identical conditions. The activation energy for the oxidation of silicon nitride decreased from 330 to 259 kJ/mol in going from dry O2 to steam while that for Si decreased from 120 to 94 kJ/mol. The parabolic rate constant for Si increased linearly as the water vapor pressure increased. However, the parabolic rate constant for silicon nitride showed nonlinear dependency on the water vapor pressure in the presence of oxygen. The oxidation kinetics of silicon nitride is explained by the formation of nitrogen compounds (NO and NH3) at the reaction interface and the counterpermeation of these reaction products.",
author = "Choi, {Doo Jin} and Fischbach, {David B.} and Scott, {William D.}",
year = "1989",
month = "1",
day = "1",
doi = "10.1111/j.1151-2916.1989.tb09693.x",
language = "English",
volume = "72",
pages = "1118--1123",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "7",

}

Oxidation of Chemically‐Vapor‐Deposited Silicon Nitride and Slnglem‐Crystal Silicon. / Choi, Doo Jin; Fischbach, David B.; Scott, William D.

In: Journal of the American Ceramic Society, Vol. 72, No. 7, 01.01.1989, p. 1118-1123.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Oxidation of Chemically‐Vapor‐Deposited Silicon Nitride and Slnglem‐Crystal Silicon

AU - Choi, Doo Jin

AU - Fischbach, David B.

AU - Scott, William D.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - Oxidation of {111} single‐crystal silicon and dense, chemically‐vapor‐deposited silicon nitride was done in clean silica tubes at temperatures of 1000° to woo°C. The oxidation rates of silicon nitride under various atmospheres (dry O2, wet O2, wet inert gas, and steam) were several orders of magnitude slower than those of silicon under the identical conditions. The activation energy for the oxidation of silicon nitride decreased from 330 to 259 kJ/mol in going from dry O2 to steam while that for Si decreased from 120 to 94 kJ/mol. The parabolic rate constant for Si increased linearly as the water vapor pressure increased. However, the parabolic rate constant for silicon nitride showed nonlinear dependency on the water vapor pressure in the presence of oxygen. The oxidation kinetics of silicon nitride is explained by the formation of nitrogen compounds (NO and NH3) at the reaction interface and the counterpermeation of these reaction products.

AB - Oxidation of {111} single‐crystal silicon and dense, chemically‐vapor‐deposited silicon nitride was done in clean silica tubes at temperatures of 1000° to woo°C. The oxidation rates of silicon nitride under various atmospheres (dry O2, wet O2, wet inert gas, and steam) were several orders of magnitude slower than those of silicon under the identical conditions. The activation energy for the oxidation of silicon nitride decreased from 330 to 259 kJ/mol in going from dry O2 to steam while that for Si decreased from 120 to 94 kJ/mol. The parabolic rate constant for Si increased linearly as the water vapor pressure increased. However, the parabolic rate constant for silicon nitride showed nonlinear dependency on the water vapor pressure in the presence of oxygen. The oxidation kinetics of silicon nitride is explained by the formation of nitrogen compounds (NO and NH3) at the reaction interface and the counterpermeation of these reaction products.

UR - http://www.scopus.com/inward/record.url?scp=4344659236&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4344659236&partnerID=8YFLogxK

U2 - 10.1111/j.1151-2916.1989.tb09693.x

DO - 10.1111/j.1151-2916.1989.tb09693.x

M3 - Article

AN - SCOPUS:4344659236

VL - 72

SP - 1118

EP - 1123

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 7

ER -