TY - JOUR
T1 - Oxidation of hydrogen terminated Ge(1 0 0) surface in the presence of iodine in methanol
AU - Lee, Younghwan
AU - Park, Kibyung
AU - Lim, Sangwoo
PY - 2008/12/30
Y1 - 2008/12/30
N2 -
Surface reaction on Ge(1 0 0) in liquid methanol (MeOH) was systematically studied. In particular, the characteristics of the Ge surface in the presence of iodine (I
2
) in MeOH were investigated. MeOH treatment of the Ge surface in the presence of 0.05 or 0.005 mM of I
2
exhibited a similar result to that without I
2
, which produces a GeO
x
-dominant oxide structure. However, when the concentration of I
2
in MeOH increased to 0.5 mM, Ge surface revealed a GeO
2
-dominant oxide structure. Therefore, it is believed that the addition of enough I
2
in MeOH modifies the Ge oxidation mechanism. Hydroxide produced by the reaction between MeOH and the iodine radical may oxidize the Ge surface to form a Ge-O layer. Because MeOH is greatly consumed by chain and series reactions when I
2
concentration is high, a GeO
2
structure is not etched and a GeO
2
-dominant oxide structure is obtained with the addition of 0.5 mM I
2
in MeOH. The modified oxide layer prepared in MeOH with 0.5 mM I
2
exhibited an atomically smoother surface compared to a pure MeOH- or H
2
O
2
-treated Ge surface and a much thinner oxide layer than H
2
O
2
treatment.
AB -
Surface reaction on Ge(1 0 0) in liquid methanol (MeOH) was systematically studied. In particular, the characteristics of the Ge surface in the presence of iodine (I
2
) in MeOH were investigated. MeOH treatment of the Ge surface in the presence of 0.05 or 0.005 mM of I
2
exhibited a similar result to that without I
2
, which produces a GeO
x
-dominant oxide structure. However, when the concentration of I
2
in MeOH increased to 0.5 mM, Ge surface revealed a GeO
2
-dominant oxide structure. Therefore, it is believed that the addition of enough I
2
in MeOH modifies the Ge oxidation mechanism. Hydroxide produced by the reaction between MeOH and the iodine radical may oxidize the Ge surface to form a Ge-O layer. Because MeOH is greatly consumed by chain and series reactions when I
2
concentration is high, a GeO
2
structure is not etched and a GeO
2
-dominant oxide structure is obtained with the addition of 0.5 mM I
2
in MeOH. The modified oxide layer prepared in MeOH with 0.5 mM I
2
exhibited an atomically smoother surface compared to a pure MeOH- or H
2
O
2
-treated Ge surface and a much thinner oxide layer than H
2
O
2
treatment.
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U2 - 10.1016/j.apsusc.2008.09.052
DO - 10.1016/j.apsusc.2008.09.052
M3 - Article
AN - SCOPUS:56949084455
VL - 255
SP - 3318
EP - 3321
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 5 PART 2
ER -