Oxide semiconductor TFTs for the next generation LCD-TV applications

Je Hun Lee, Do Hyun Kim, Dong Ju Yang, Sun Young Hong, Kap Soo Yoon, Pil Soon Hong, Chang Oh Jeong, Geun Lee Woo, Jin Ho Song, Yul Kim Shi, Soo Kim Sang, Kyoung Seok Son, Tae Sang Kim, Jang Yeon Kwon, Sang Yoon Lee

Research output: Contribution to journalConference article

Abstract

For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage (Vth) shift influenced by active layer thickness uniformity, source drain etching technology, heat treatment and passivation condition. Optimizing above parameters, we fabricated the world's largest 15 inch XGA AMLCD successfully.

Original languageEnglish
Pages (from-to)1203-1207
Number of pages5
JournalProceedings of International Meeting on Information Display
Volume8
Publication statusPublished - 2008 Dec 1
Event8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 - Ilsan, Korea, Republic of
Duration: 2008 Oct 132008 Oct 17

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Amorphous films
Thin film transistors
Liquid crystal displays
Threshold voltage
Passivation
Etching
Heat treatment
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, J. H., Kim, D. H., Yang, D. J., Hong, S. Y., Yoon, K. S., Hong, P. S., ... Lee, S. Y. (2008). Oxide semiconductor TFTs for the next generation LCD-TV applications. Proceedings of International Meeting on Information Display, 8, 1203-1207.
Lee, Je Hun ; Kim, Do Hyun ; Yang, Dong Ju ; Hong, Sun Young ; Yoon, Kap Soo ; Hong, Pil Soon ; Jeong, Chang Oh ; Woo, Geun Lee ; Song, Jin Ho ; Shi, Yul Kim ; Sang, Soo Kim ; Son, Kyoung Seok ; Kim, Tae Sang ; Kwon, Jang Yeon ; Lee, Sang Yoon. / Oxide semiconductor TFTs for the next generation LCD-TV applications. In: Proceedings of International Meeting on Information Display. 2008 ; Vol. 8. pp. 1203-1207.
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abstract = "For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage (Vth) shift influenced by active layer thickness uniformity, source drain etching technology, heat treatment and passivation condition. Optimizing above parameters, we fabricated the world's largest 15 inch XGA AMLCD successfully.",
author = "Lee, {Je Hun} and Kim, {Do Hyun} and Yang, {Dong Ju} and Hong, {Sun Young} and Yoon, {Kap Soo} and Hong, {Pil Soon} and Jeong, {Chang Oh} and Woo, {Geun Lee} and Song, {Jin Ho} and Shi, {Yul Kim} and Sang, {Soo Kim} and Son, {Kyoung Seok} and Kim, {Tae Sang} and Kwon, {Jang Yeon} and Lee, {Sang Yoon}",
year = "2008",
month = "12",
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Lee, JH, Kim, DH, Yang, DJ, Hong, SY, Yoon, KS, Hong, PS, Jeong, CO, Woo, GL, Song, JH, Shi, YK, Sang, SK, Son, KS, Kim, TS, Kwon, JY & Lee, SY 2008, 'Oxide semiconductor TFTs for the next generation LCD-TV applications', Proceedings of International Meeting on Information Display, vol. 8, pp. 1203-1207.

Oxide semiconductor TFTs for the next generation LCD-TV applications. / Lee, Je Hun; Kim, Do Hyun; Yang, Dong Ju; Hong, Sun Young; Yoon, Kap Soo; Hong, Pil Soon; Jeong, Chang Oh; Woo, Geun Lee; Song, Jin Ho; Shi, Yul Kim; Sang, Soo Kim; Son, Kyoung Seok; Kim, Tae Sang; Kwon, Jang Yeon; Lee, Sang Yoon.

In: Proceedings of International Meeting on Information Display, Vol. 8, 01.12.2008, p. 1203-1207.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Oxide semiconductor TFTs for the next generation LCD-TV applications

AU - Lee, Je Hun

AU - Kim, Do Hyun

AU - Yang, Dong Ju

AU - Hong, Sun Young

AU - Yoon, Kap Soo

AU - Hong, Pil Soon

AU - Jeong, Chang Oh

AU - Woo, Geun Lee

AU - Song, Jin Ho

AU - Shi, Yul Kim

AU - Sang, Soo Kim

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Kwon, Jang Yeon

AU - Lee, Sang Yoon

PY - 2008/12/1

Y1 - 2008/12/1

N2 - For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage (Vth) shift influenced by active layer thickness uniformity, source drain etching technology, heat treatment and passivation condition. Optimizing above parameters, we fabricated the world's largest 15 inch XGA AMLCD successfully.

AB - For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage (Vth) shift influenced by active layer thickness uniformity, source drain etching technology, heat treatment and passivation condition. Optimizing above parameters, we fabricated the world's largest 15 inch XGA AMLCD successfully.

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M3 - Conference article

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JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

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Lee JH, Kim DH, Yang DJ, Hong SY, Yoon KS, Hong PS et al. Oxide semiconductor TFTs for the next generation LCD-TV applications. Proceedings of International Meeting on Information Display. 2008 Dec 1;8:1203-1207.