Abstract
We propose low-temperature fabricated amorphous oxide semiconductor thin film transistors (AOS TFTs) by simultaneous ultraviolet and thermal (SUT), electrically assisted thermal (EAT), and high pressum annealing (HPA) treatments. In addition, we investigated a new material, nitrocellulose, as a low-temperature processale passivation layer of oxide TFTs.
| Original language | English |
|---|---|
| Title of host publication | 24th International Display Workshops, IDW 2017 |
| Publisher | International Display Workshops |
| Pages | 332-335 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510858992 |
| Publication status | Published - 2017 |
| Event | 24th International Display Workshops, IDW 2017 - Sendai, Japan Duration: 2017 Dec 6 → 2017 Dec 8 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1883-2490 |
Other
| Other | 24th International Display Workshops, IDW 2017 |
|---|---|
| Country/Territory | Japan |
| City | Sendai |
| Period | 17/12/6 → 17/12/8 |
Bibliographical note
Publisher Copyright:© 2017 Proceedings of the International Display Workshops. All rights reserved.
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
