Oxide TFT fabrication with various low temperature techniques

S. Hong, H. J. Kim, I. S. Lee, H. T. Kim, H. J. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose various researches to lower processing temperature in oxide thin film transistors (TFTs): photocatalytic reactions of titanium dioxide (PRT) and rotating magnetic field (RMF) treatment. PRT utilizes hydroxyl radical-assisted decomposition. It can be generated by UV irradiation on titanium dioxide (TiO:) and water molecules in precursor solution. RMF uses magnetic interactions between metal and oxygen atoms. In addition, we suggest ethyl cyanoacrylate (ECA) based instant glue (IG) as a new material for passivation layers of oxide TFTs with low processing temperature.

Original languageEnglish
Title of host publicationECS Transactions
EditorsYue Kuo
PublisherElectrochemical Society Inc.
Pages95-104
Number of pages10
Edition11
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2018
EventSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number11
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/TerritoryMexico
CityCancun
Period18/9/3018/10/4

Bibliographical note

Publisher Copyright:
© 2018 Electrochemical Society Inc.All rights reserved.

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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