Abstract
Crystallographic features of the heteroepitaxially grown yttrium oxide films on Si (1 0 0) and Si (1 1 1) substrates by ultra-high vacuum ionized cluster beam (UHV-ICB) were investigated by non-Rutherford backscattering spectrometry/ channeling. The heteroepitaxially grown Y 2 O 3 films with 1080 Å thick on Si (1 0 0) and Si (1 1 1) were completely stoichiometric with the composition ratio of Y/O= 1/1.5 regardless of substrates. Channeling minimum yields of Y 2 O 3 films on Si (1 0 0) and Si (1 1 1) are 0.39 and 0.10, respectively, which were much smaller values than the minimum values (>0.8) of Y 2 O 3 films on Si substrates deposited by other methods. The results of non-Rutherford backscattering spectrometry/channeling show that the oxygen atoms in heteroepitaxially grown Y 2 O 3 on Si (1 1 1) substrates have reasonable crystallinity, but those on Si (1 0 0) substrates are displaced from the regular sub-lattice sites.
| Original language | English |
|---|---|
| Pages (from-to) | 393-396 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 142 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1998 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Instrumentation
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Oxygen distribution in the heteroepitaxially grown Y 2 O 3 films on Si substrates . / Kim, H. B.; Cho, Mann-Ho; Whangbo, S. W.; Whang, C. N.; Choi, S. C.; Choi, W. K.; Song, J. H.; Kim, S. O.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 142, No. 3, 01.01.1998, p. 393-396.Research output: Contribution to journal › Article
TY - JOUR
T1 - Oxygen distribution in the heteroepitaxially grown Y 2 O 3 films on Si substrates
AU - Kim, H. B.
AU - Cho, Mann-Ho
AU - Whangbo, S. W.
AU - Whang, C. N.
AU - Choi, S. C.
AU - Choi, W. K.
AU - Song, J. H.
AU - Kim, S. O.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - Crystallographic features of the heteroepitaxially grown yttrium oxide films on Si (1 0 0) and Si (1 1 1) substrates by ultra-high vacuum ionized cluster beam (UHV-ICB) were investigated by non-Rutherford backscattering spectrometry/ channeling. The heteroepitaxially grown Y 2 O 3 films with 1080 Å thick on Si (1 0 0) and Si (1 1 1) were completely stoichiometric with the composition ratio of Y/O= 1/1.5 regardless of substrates. Channeling minimum yields of Y 2 O 3 films on Si (1 0 0) and Si (1 1 1) are 0.39 and 0.10, respectively, which were much smaller values than the minimum values (>0.8) of Y 2 O 3 films on Si substrates deposited by other methods. The results of non-Rutherford backscattering spectrometry/channeling show that the oxygen atoms in heteroepitaxially grown Y 2 O 3 on Si (1 1 1) substrates have reasonable crystallinity, but those on Si (1 0 0) substrates are displaced from the regular sub-lattice sites.
AB - Crystallographic features of the heteroepitaxially grown yttrium oxide films on Si (1 0 0) and Si (1 1 1) substrates by ultra-high vacuum ionized cluster beam (UHV-ICB) were investigated by non-Rutherford backscattering spectrometry/ channeling. The heteroepitaxially grown Y 2 O 3 films with 1080 Å thick on Si (1 0 0) and Si (1 1 1) were completely stoichiometric with the composition ratio of Y/O= 1/1.5 regardless of substrates. Channeling minimum yields of Y 2 O 3 films on Si (1 0 0) and Si (1 1 1) are 0.39 and 0.10, respectively, which were much smaller values than the minimum values (>0.8) of Y 2 O 3 films on Si substrates deposited by other methods. The results of non-Rutherford backscattering spectrometry/channeling show that the oxygen atoms in heteroepitaxially grown Y 2 O 3 on Si (1 1 1) substrates have reasonable crystallinity, but those on Si (1 0 0) substrates are displaced from the regular sub-lattice sites.
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U2 - 10.1016/S0168-583X(98)00332-2
DO - 10.1016/S0168-583X(98)00332-2
M3 - Article
AN - SCOPUS:0032115579
VL - 142
SP - 393
EP - 396
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 3
ER -