Oxygen distribution in the heteroepitaxially grown Y2O3 films on Si substrates

H. B. Kim; M. H. Cho; S. W. Whangbo; C. N. Whang; S. C. Choi; W. K. Choi; J. H. Song; S. O. Kim

doi:10.1016/S0168-583X(98)00332-2

Oxygen distribution in the heteroepitaxially grown Y₂O₃ films on Si substrates

H. B. Kim, M. H. Cho, S. W. Whangbo, C. N. Whang, S. C. Choi, W. K. Choi, J. H. Song, S. O. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Crystallographic features of the heteroepitaxially grown yttrium oxide films on Si (1 0 0) and Si (1 1 1) substrates by ultra-high vacuum ionized cluster beam (UHV-ICB) were investigated by non-Rutherford backscattering spectrometry/ channeling. The heteroepitaxially grown Y₂O₃ films with 1080 Å thick on Si (1 0 0) and Si (1 1 1) were completely stoichiometric with the composition ratio of Y/O= 1/1.5 regardless of substrates. Channeling minimum yields of Y₂O₃ films on Si (1 0 0) and Si (1 1 1) are 0.39 and 0.10, respectively, which were much smaller values than the minimum values (>0.8) of Y₂O₃ films on Si substrates deposited by other methods. The results of non-Rutherford backscattering spectrometry/channeling show that the oxygen atoms in heteroepitaxially grown Y₂O₃ on Si (1 1 1) substrates have reasonable crystallinity, but those on Si (1 0 0) substrates are displaced from the regular sub-lattice sites.

Original language	English
Pages (from-to)	393-396
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	142
Issue number	3
DOIs	https://doi.org/10.1016/S0168-583X(98)00332-2
Publication status	Published - 1998 Jul

Bibliographical note

Funding Information:
This work was supported by Basic Researches for the Future (4-2N15960).

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(98)00332-2

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@article{4d99f895b1bf4acfbcfd1fb1fd6bb258,

title = "Oxygen distribution in the heteroepitaxially grown Y2O3 films on Si substrates",

abstract = "Crystallographic features of the heteroepitaxially grown yttrium oxide films on Si (1 0 0) and Si (1 1 1) substrates by ultra-high vacuum ionized cluster beam (UHV-ICB) were investigated by non-Rutherford backscattering spectrometry/ channeling. The heteroepitaxially grown Y2O3 films with 1080 {\AA} thick on Si (1 0 0) and Si (1 1 1) were completely stoichiometric with the composition ratio of Y/O= 1/1.5 regardless of substrates. Channeling minimum yields of Y2O3 films on Si (1 0 0) and Si (1 1 1) are 0.39 and 0.10, respectively, which were much smaller values than the minimum values (>0.8) of Y2O3 films on Si substrates deposited by other methods. The results of non-Rutherford backscattering spectrometry/channeling show that the oxygen atoms in heteroepitaxially grown Y2O3 on Si (1 1 1) substrates have reasonable crystallinity, but those on Si (1 0 0) substrates are displaced from the regular sub-lattice sites.",

author = "Kim, {H. B.} and Cho, {M. H.} and Whangbo, {S. W.} and Whang, {C. N.} and Choi, {S. C.} and Choi, {W. K.} and Song, {J. H.} and Kim, {S. O.}",

note = "Funding Information: This work was supported by Basic Researches for the Future (4-2N15960). ",

year = "1998",

month = jul,

doi = "10.1016/S0168-583X(98)00332-2",

language = "English",

volume = "142",

pages = "393--396",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "3",

}

Oxygen distribution in the heteroepitaxially grown Y₂O₃ films on Si substrates. / Kim, H. B.; Cho, M. H.; Whangbo, S. W.; Whang, C. N.; Choi, S. C.; Choi, W. K.; Song, J. H.; Kim, S. O.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 142, No. 3, 07.1998, p. 393-396.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Oxygen distribution in the heteroepitaxially grown Y2O3 films on Si substrates

AU - Kim, H. B.

AU - Cho, M. H.

AU - Whangbo, S. W.

AU - Whang, C. N.

AU - Choi, S. C.

AU - Choi, W. K.

AU - Song, J. H.

AU - Kim, S. O.

N1 - Funding Information: This work was supported by Basic Researches for the Future (4-2N15960).

PY - 1998/7

Y1 - 1998/7

N2 - Crystallographic features of the heteroepitaxially grown yttrium oxide films on Si (1 0 0) and Si (1 1 1) substrates by ultra-high vacuum ionized cluster beam (UHV-ICB) were investigated by non-Rutherford backscattering spectrometry/ channeling. The heteroepitaxially grown Y2O3 films with 1080 Å thick on Si (1 0 0) and Si (1 1 1) were completely stoichiometric with the composition ratio of Y/O= 1/1.5 regardless of substrates. Channeling minimum yields of Y2O3 films on Si (1 0 0) and Si (1 1 1) are 0.39 and 0.10, respectively, which were much smaller values than the minimum values (>0.8) of Y2O3 films on Si substrates deposited by other methods. The results of non-Rutherford backscattering spectrometry/channeling show that the oxygen atoms in heteroepitaxially grown Y2O3 on Si (1 1 1) substrates have reasonable crystallinity, but those on Si (1 0 0) substrates are displaced from the regular sub-lattice sites.

AB - Crystallographic features of the heteroepitaxially grown yttrium oxide films on Si (1 0 0) and Si (1 1 1) substrates by ultra-high vacuum ionized cluster beam (UHV-ICB) were investigated by non-Rutherford backscattering spectrometry/ channeling. The heteroepitaxially grown Y2O3 films with 1080 Å thick on Si (1 0 0) and Si (1 1 1) were completely stoichiometric with the composition ratio of Y/O= 1/1.5 regardless of substrates. Channeling minimum yields of Y2O3 films on Si (1 0 0) and Si (1 1 1) are 0.39 and 0.10, respectively, which were much smaller values than the minimum values (>0.8) of Y2O3 films on Si substrates deposited by other methods. The results of non-Rutherford backscattering spectrometry/channeling show that the oxygen atoms in heteroepitaxially grown Y2O3 on Si (1 1 1) substrates have reasonable crystallinity, but those on Si (1 0 0) substrates are displaced from the regular sub-lattice sites.

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