Oxygen distribution in the heteroepitaxially grown Y2O3 films on Si substrates

H. B. Kim, M. H. Cho, S. W. Whangbo, C. N. Whang, S. C. Choi, W. K. Choi, J. H. Song, S. O. Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Crystallographic features of the heteroepitaxially grown yttrium oxide films on Si (1 0 0) and Si (1 1 1) substrates by ultra-high vacuum ionized cluster beam (UHV-ICB) were investigated by non-Rutherford backscattering spectrometry/ channeling. The heteroepitaxially grown Y2O3 films with 1080 Å thick on Si (1 0 0) and Si (1 1 1) were completely stoichiometric with the composition ratio of Y/O= 1/1.5 regardless of substrates. Channeling minimum yields of Y2O3 films on Si (1 0 0) and Si (1 1 1) are 0.39 and 0.10, respectively, which were much smaller values than the minimum values (>0.8) of Y2O3 films on Si substrates deposited by other methods. The results of non-Rutherford backscattering spectrometry/channeling show that the oxygen atoms in heteroepitaxially grown Y2O3 on Si (1 1 1) substrates have reasonable crystallinity, but those on Si (1 0 0) substrates are displaced from the regular sub-lattice sites.

Original languageEnglish
Pages (from-to)393-396
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume142
Issue number3
DOIs
Publication statusPublished - 1998 Jul

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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