Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate

Do Young Kim, Jong Man Kim, Ji Sim Jung, Jang Yeon Kwon, Hans S. Cho, Kyung Bae Park, Hyuck Lim, Takashi Noguchi

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Abstract

We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.% was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.

Original languageEnglish
Pages (from-to)L74-L76
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number1-3
DOIs
Publication statusPublished - 2006 Jan 31

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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