Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate

Do Young Kim, Jong Man Kim, Ji Sim Jung, Jang-Yeon Kwon, Hans S. Cho, Kyung Bae Park, Hyuck Lim, Takashi Noguchi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.% was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number1-3
DOIs
Publication statusPublished - 2006 Jan 31

Fingerprint

plastics
Crystallization
crystallization
Plastics
Oxygen
Lasers
oxygen
Substrates
lasers
Sputtering
sputtering
Atoms
agglomeration
Grain growth
oxygen atoms
surface roughness
Agglomeration
Surface roughness
Gases
gases

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Kim, Do Young ; Kim, Jong Man ; Jung, Ji Sim ; Kwon, Jang-Yeon ; Cho, Hans S. ; Park, Kyung Bae ; Lim, Hyuck ; Noguchi, Takashi. / Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate. In: Japanese Journal of Applied Physics, Part 2: Letters. 2006 ; Vol. 45, No. 1-3.
@article{07ea273760ef4a91a5dd176e62355341,
title = "Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate",
abstract = "We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.{\%} was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.",
author = "Kim, {Do Young} and Kim, {Jong Man} and Jung, {Ji Sim} and Jang-Yeon Kwon and Cho, {Hans S.} and Park, {Kyung Bae} and Hyuck Lim and Takashi Noguchi",
year = "2006",
month = "1",
day = "31",
doi = "10.1143/JJAP.45.L74",
language = "English",
volume = "45",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1-3",

}

Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate. / Kim, Do Young; Kim, Jong Man; Jung, Ji Sim; Kwon, Jang-Yeon; Cho, Hans S.; Park, Kyung Bae; Lim, Hyuck; Noguchi, Takashi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 1-3, 31.01.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate

AU - Kim, Do Young

AU - Kim, Jong Man

AU - Jung, Ji Sim

AU - Kwon, Jang-Yeon

AU - Cho, Hans S.

AU - Park, Kyung Bae

AU - Lim, Hyuck

AU - Noguchi, Takashi

PY - 2006/1/31

Y1 - 2006/1/31

N2 - We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.% was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.

AB - We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.% was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.

UR - http://www.scopus.com/inward/record.url?scp=32044452241&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=32044452241&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.L74

DO - 10.1143/JJAP.45.L74

M3 - Article

VL - 45

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1-3

ER -