We studied a-Si film deposited on plastic substrate by rf sputtering as a precursor material for laser crystallization. a-Si films were deposited at room temperature and crystallized using excimer laser irradiation. It was found that the a-Si film deposited by rf sputtering was delaminated even at low laser energy densities below the energy condition for distinct lateral grain growth. Oxygen contents were optimized for a-Si films deposited by Xe sputtering. The oxygen gas incorporation is thought to increase the surface roughness and to induce the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in poly-Si film limit the grain growth of Si film.
|Number of pages||4|
|Publication status||Published - 2005 Dec 1|
|Event||IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan|
Duration: 2005 Dec 6 → 2005 Dec 9
|Other||IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005|
|Period||05/12/6 → 05/12/9|
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