Oxygen vacancy-passivated ZnO thin film formed by atomic layer deposition using H2O2

Yue Wang, Kyung Mun Kang, Minjae Kim, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Intrinsic defect oxygen vacancies, which can easily form in ZnO films and result in a compensation effect on p-type dopants, have long prevented the preparation of high-quality p-type ZnO; consequently, the application of ZnO in optoelectronic devices has been adversely affected. Therefore, in this investigation, the passivation of oxygen vacancies in undoped ZnO using H2O2 as an oxygen source is studied using atomic layer deposition (ALD). The ALD growth window ranged from 60 to 150 °C, and the use of H2O2 as an oxygen source, instead of H2O, changed the preferred growth orientation from coexisting a- and c-axes to only the c-axis, which indicated that H2O2 can provide an oxygen-rich environment for the growth of ZnO. Photoluminescence results indicated that oxygen vacancies in the ZnO film reduced significantly when H2O2 was used as the oxygen precursor instead of H2O for film preparation. Further, oxygen vacancies can be suppressed more efficiently using H2O2 when ZnO films were deposited at lower temperatures than at high temperatures. A decrease in the optical bandgap and an increase in the work function were observed when films were prepared using H2O2 due to a lowering of the Fermi level. Therefore, the use of H2O2 as an oxygen source is effective in providing an oxygen-rich environment and passivating oxygen vacancies in ZnO, which might be beneficial for the preparation of p-type ZnO films.

Original languageEnglish
Article number031504
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
Publication statusPublished - 2018 May 1

Bibliographical note

Funding Information:
This material is based on the investigation supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program (No. 10068075), Development of Mott-transition based forming-less nonvolatile resistive switching memory and array. Experiments at the Pohang Accelerator Laboratory were supported in part by the Ministry of Science, ICT and Future Planning (MSIP), and POSTECH. Yue Wang would like to thank the China Scholarship Council (CSC) for financial support (No. 201608440332).

Publisher Copyright:
© 2018 Author(s).

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Oxygen vacancy-passivated ZnO thin film formed by atomic layer deposition using H2O2'. Together they form a unique fingerprint.

Cite this