P-14: High performance solution-processed IGZO TFTs formed by using a high-pressure annealing method

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Hyun Soo Shin, Hyun Jae Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 oC, its channel mobility (μFE), threshold voltage (Vth), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm2/Vs, 2.47 V, 0.48 V/dec. and 7.5×106, respectively.

Original languageEnglish
Pages (from-to)1148-1150
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume42 1
Publication statusPublished - 2011 Jun 1

Fingerprint

Gallium
Thin film transistors
Zinc oxide
Indium
Oxide films
Annealing
Threshold voltage
Electric properties
Decomposition
Defects
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

@article{5ad60ddbf3cf480eb975b01e6fbce961,
title = "P-14: High performance solution-processed IGZO TFTs formed by using a high-pressure annealing method",
abstract = "We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 oC, its channel mobility (μFE), threshold voltage (Vth), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm2/Vs, 2.47 V, 0.48 V/dec. and 7.5×106, respectively.",
author = "Rim, {You Seung} and Kim, {Dong Lim} and Jeong, {Woong Hee} and Shin, {Hyun Soo} and Kim, {Hyun Jae}",
year = "2011",
month = "6",
day = "1",
language = "English",
volume = "42 1",
pages = "1148--1150",
journal = "Digest of Technical Papers - SID International Symposium",
issn = "0097-966X",

}

P-14 : High performance solution-processed IGZO TFTs formed by using a high-pressure annealing method. / Rim, You Seung; Kim, Dong Lim; Jeong, Woong Hee; Shin, Hyun Soo; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 42 1, 01.06.2011, p. 1148-1150.

Research output: Contribution to journalArticle

TY - JOUR

T1 - P-14

T2 - High performance solution-processed IGZO TFTs formed by using a high-pressure annealing method

AU - Rim, You Seung

AU - Kim, Dong Lim

AU - Jeong, Woong Hee

AU - Shin, Hyun Soo

AU - Kim, Hyun Jae

PY - 2011/6/1

Y1 - 2011/6/1

N2 - We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 oC, its channel mobility (μFE), threshold voltage (Vth), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm2/Vs, 2.47 V, 0.48 V/dec. and 7.5×106, respectively.

AB - We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 oC, its channel mobility (μFE), threshold voltage (Vth), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm2/Vs, 2.47 V, 0.48 V/dec. and 7.5×106, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84863224202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863224202&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84863224202

VL - 42 1

SP - 1148

EP - 1150

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

ER -