We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 oC, its channel mobility (μFE), threshold voltage (Vth), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm2/Vs, 2.47 V, 0.48 V/dec. and 7.5×106, respectively.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2011 Jun|
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