P-19

Effect of back channel passivation on the operation stability of solution-processed transparent oxide tfts and ring oscillators

Yong Hoon Kim, Min Suk Oh, Kwang Ho Kim, Hyun Jae Kim, Jeong In Han, Sung Kyu Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, the effects of back channel passivation on the electrical stability of solution-processed zinc-tin-oxide thin-film transistors (ZTO TFTs) and ring oscillators have been investigated. Based on solution-processed ZTO TFTs, ring oscillators with an oscillation frequency up to 769 kHz were realized and it was found that the passivation layer had a strong influence on the operation stability of the ring oscillators.

Original languageEnglish
Pages (from-to)1166-1169
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume42 1
Publication statusPublished - 2011 Jun 1

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Thin film transistors
Zinc oxide
Tin oxides
Passivation
Oxide films
Oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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title = "P-19: Effect of back channel passivation on the operation stability of solution-processed transparent oxide tfts and ring oscillators",
abstract = "In this paper, the effects of back channel passivation on the electrical stability of solution-processed zinc-tin-oxide thin-film transistors (ZTO TFTs) and ring oscillators have been investigated. Based on solution-processed ZTO TFTs, ring oscillators with an oscillation frequency up to 769 kHz were realized and it was found that the passivation layer had a strong influence on the operation stability of the ring oscillators.",
author = "Kim, {Yong Hoon} and Oh, {Min Suk} and Kim, {Kwang Ho} and Kim, {Hyun Jae} and Han, {Jeong In} and Park, {Sung Kyu}",
year = "2011",
month = "6",
day = "1",
language = "English",
volume = "42 1",
pages = "1166--1169",
journal = "Digest of Technical Papers - SID International Symposium",
issn = "0097-966X",

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P-19 : Effect of back channel passivation on the operation stability of solution-processed transparent oxide tfts and ring oscillators. / Kim, Yong Hoon; Oh, Min Suk; Kim, Kwang Ho; Kim, Hyun Jae; Han, Jeong In; Park, Sung Kyu.

In: Digest of Technical Papers - SID International Symposium, Vol. 42 1, 01.06.2011, p. 1166-1169.

Research output: Contribution to journalArticle

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AU - Kim, Yong Hoon

AU - Oh, Min Suk

AU - Kim, Kwang Ho

AU - Kim, Hyun Jae

AU - Han, Jeong In

AU - Park, Sung Kyu

PY - 2011/6/1

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AB - In this paper, the effects of back channel passivation on the electrical stability of solution-processed zinc-tin-oxide thin-film transistors (ZTO TFTs) and ring oscillators have been investigated. Based on solution-processed ZTO TFTs, ring oscillators with an oscillation frequency up to 769 kHz were realized and it was found that the passivation layer had a strong influence on the operation stability of the ring oscillators.

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