P-22

Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

Jung Hyeon Bae, Gun Wee Kim, Woong Wee Jeong, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

Original languageEnglish
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages1304-1307
Number of pages4
Volume3
Publication statusPublished - 2010 Dec 1
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 2010 May 232010 May 28

Other

Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period10/5/2310/5/28

Fingerprint

Charge trapping
Thin film transistors
Oxide films
Nanoparticles
Data storage equipment
Hysteresis
Electrons

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Information Systems

Cite this

Bae, J. H., Kim, G. W., Jeong, W. W., & Kim, H. J. (2010). P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 (Vol. 3, pp. 1304-1307)
Bae, Jung Hyeon ; Kim, Gun Wee ; Jeong, Woong Wee ; Kim, Hyun Jae. / P-22 : Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. Vol. 3 2010. pp. 1304-1307
@inproceedings{a2a54f80fb7942c3aab374625f95fabe,
title = "P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles",
abstract = "In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.",
author = "Bae, {Jung Hyeon} and Kim, {Gun Wee} and Jeong, {Woong Wee} and Kim, {Hyun Jae}",
year = "2010",
month = "12",
day = "1",
language = "English",
isbn = "9781618390950",
volume = "3",
pages = "1304--1307",
booktitle = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",

}

Bae, JH, Kim, GW, Jeong, WW & Kim, HJ 2010, P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. vol. 3, pp. 1304-1307, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, Seattle, WA, United States, 10/5/23.

P-22 : Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. / Bae, Jung Hyeon; Kim, Gun Wee; Jeong, Woong Wee; Kim, Hyun Jae.

48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. Vol. 3 2010. p. 1304-1307.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - P-22

T2 - Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

AU - Bae, Jung Hyeon

AU - Kim, Gun Wee

AU - Jeong, Woong Wee

AU - Kim, Hyun Jae

PY - 2010/12/1

Y1 - 2010/12/1

N2 - In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

AB - In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

UR - http://www.scopus.com/inward/record.url?scp=80755181486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80755181486&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781618390950

VL - 3

SP - 1304

EP - 1307

BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

ER -

Bae JH, Kim GW, Jeong WW, Kim HJ. P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. Vol. 3. 2010. p. 1304-1307