P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

Jung Hyeon Bae, Gun Wee Kim, Woong Wee Jeong, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

Original languageEnglish
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages1304-1307
Number of pages4
Publication statusPublished - 2010 Dec 1
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 2010 May 232010 May 28

Publication series

Name48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Volume3

Other

Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period10/5/2310/5/28

Fingerprint

Charge trapping
Thin film transistors
Oxide films
Nanoparticles
Data storage equipment
Hysteresis
Electrons

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Information Systems

Cite this

Bae, J. H., Kim, G. W., Jeong, W. W., & Kim, H. J. (2010). P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 (pp. 1304-1307). (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010; Vol. 3).
Bae, Jung Hyeon ; Kim, Gun Wee ; Jeong, Woong Wee ; Kim, Hyun Jae. / P-22 : Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2010. pp. 1304-1307 (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010).
@inproceedings{a2a54f80fb7942c3aab374625f95fabe,
title = "P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles",
abstract = "In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.",
author = "Bae, {Jung Hyeon} and Kim, {Gun Wee} and Jeong, {Woong Wee} and Kim, {Hyun Jae}",
year = "2010",
month = "12",
day = "1",
language = "English",
isbn = "9781618390950",
series = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",
pages = "1304--1307",
booktitle = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",

}

Bae, JH, Kim, GW, Jeong, WW & Kim, HJ 2010, P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, vol. 3, pp. 1304-1307, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, Seattle, WA, United States, 10/5/23.

P-22 : Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. / Bae, Jung Hyeon; Kim, Gun Wee; Jeong, Woong Wee; Kim, Hyun Jae.

48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2010. p. 1304-1307 (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010; Vol. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - P-22

T2 - Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

AU - Bae, Jung Hyeon

AU - Kim, Gun Wee

AU - Jeong, Woong Wee

AU - Kim, Hyun Jae

PY - 2010/12/1

Y1 - 2010/12/1

N2 - In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

AB - In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

UR - http://www.scopus.com/inward/record.url?scp=80755181486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80755181486&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:80755181486

SN - 9781618390950

T3 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

SP - 1304

EP - 1307

BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

ER -

Bae JH, Kim GW, Jeong WW, Kim HJ. P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2010. p. 1304-1307. (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010).