P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

Jung Hyeon Bae, Gun Wee Kim, Woong Wee Jeong, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

Original languageEnglish
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages1304-1307
Number of pages4
Publication statusPublished - 2010
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 2010 May 232010 May 28

Publication series

Name48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Volume3

Other

Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period10/5/2310/5/28

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Information Systems

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